Journal of Semiconductors, Volume. 40, Issue 5, 052802(2019)

Effect of inhomogeneous broadening on threshold current of GaN-based green laser diodes

Yipeng Liang1,2,3, Jianping Liu1,2,3, Masao Ikeda2,3, Aiqin Tian2,3, Renlin Zhou1,2,3, Shuming Zhang1,2,3, Tong Liu4, Deyao Li2,3, Liqun Zhang2,3, and Hui Yang1,2,3
Author Affiliations
  • 1School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China
  • 2Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science, Suzhou 215123, China
  • 3Key Laboratory of Nanodevices and Applications, Chinese of Academy of Science, Suzhou 215123, China
  • 4Vacuum Interconnected Nanotech Workstation (NANO-X), Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
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    Figures & Tables(4)
    (Color online) Band modal (Valence band and Conduction band).
    (Color online) Net modal gain spectra and fitting curves of (a) LD1 and (b) LD2.
    (Color online) The relationship between modal peak gain and current density.
    STEM images of LD1 and LD2.
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    Yipeng Liang, Jianping Liu, Masao Ikeda, Aiqin Tian, Renlin Zhou, Shuming Zhang, Tong Liu, Deyao Li, Liqun Zhang, Hui Yang. Effect of inhomogeneous broadening on threshold current of GaN-based green laser diodes[J]. Journal of Semiconductors, 2019, 40(5): 052802

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    Paper Information

    Category: Articles

    Received: Feb. 12, 2019

    Accepted: --

    Published Online: Sep. 18, 2021

    The Author Email:

    DOI:10.1088/1674-4926/40/5/052802

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