Journal of Semiconductors, Volume. 41, Issue 8, 080201(2020)
High Curie temperature ferromagnetism and high hole mobility in tensile strained Mn-doped SiGe thin films
References(0)
Tools
Get Citation
Copy Citation Text
Jianhua Zhao. High Curie temperature ferromagnetism and high hole mobility in tensile strained Mn-doped SiGe thin films[J]. Journal of Semiconductors, 2020, 41(8): 080201
Paper Information
Category: Research Highlight
Received: --
Accepted: --
Published Online: Sep. 10, 2021
The Author Email:
© Copyright 2018-2021 | Chinese Laser Press.
All Rights Reserved 沪ICP备15018463号-20