Journal of Semiconductors, Volume. 41, Issue 8, 080201(2020)
High Curie temperature ferromagnetism and high hole mobility in tensile strained Mn-doped SiGe thin films
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Jianhua Zhao. High Curie temperature ferromagnetism and high hole mobility in tensile strained Mn-doped SiGe thin films[J]. Journal of Semiconductors, 2020, 41(8): 080201
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Category: Research Highlight
Received: --
Accepted: --
Published Online: Sep. 10, 2021
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