[1] CHOI M K, YANG J, HYEON T et al. Flexible quantum dot light-emitting diodes for next-generation displays[J]. NPJ Flexible Electronics, 2, 10(2018).

[2] ZHANG Y M, YUAN X, CHEN Z et al. Development of the ink-jet printing technology for 55-inch 8K AMQLED display[J]. Journal of the Society for Information Display, 31, 355-362(2023).

[3] MIAO W C, HSIAO F H, SHENG Y J et al. Microdisplays: mini-LED, micro-OLED, and micro-LED[J]. Advanced Optical Materials(2023).

[4] LI C Y, LIN X, HU P et al. Exploration of ultra-large size 16K high resolution technology[J]. SID Symposium Digest of Technical Papers, 54, 811-813(2023).

[5] HUANG Z H, SHAO X B, WANG Z T et al. Ultra-high frame rate ADS LCDs[J]. SID Symposium Digest of Technical Papers, 54, 799-802(2023).

[6] SEO H S, CAO W R, XIAO J C et al. High quality 8K4K displays driven by oxide semiconductor thin film transistor in the generation 11 equipment[J]. SID Symposium Digest of Technical Papers, 51, 301-304(2020).

[7] WAGER J F. Flat-panel-display backplanes: LTPS or IGZO for AMLCDs or AMOLED displays?[J]. Information Display, 30, 26-29(2014).

[8] YE J H, HUANG C L, CHEN M Y et al. Development of crystalline IGZO and LTPS hybrid TFTs array technology[J]. SID Symposium Digest of Technical Papers, 48, 600-603(2017).

[9] CHANG T K, LIN C W, CHANG S. LTPO TFT technology for AMOLEDs[J]. SID Symposium Digest of Technical Papers, 50, 545-548(2019).

[10] MATIVENGA M, GENG D, JANG J. Oxide versus LTPS TFT for active-matrix displays[J]. SID Symposium Digest of Technical Papers, 45, 1-4(2014).

[11] STRIAKHILEV D, PARK B K, TANG S J. Metal oxide semiconductor thin-film transistor backplanes for displays and imaging[J]. MRS Bulletin, 46, 1063-1070(2021).

[12] FORTUNATO E, BARQUINHA P, MARTINS R. Oxide semiconductor thin-film transistors: a review of recent advances[J]. Advanced Materials, 24, 2945-2986(2012).

[13] LAN L F, ZHANG P, PENG J B. Research progress on oxide-based thin film transisitors[J]. Acta Physica Sinica, 65, 128504(2016).

[14] LEE S Y. Comprehensive review on amorphous oxide semiconductor thin film transistor[J]. Transactions on Electrical and Electronic Materials, 21, 235-248(2020).

[15] BIERWAGEN O. Indium oxide—a transparent, wide-band gap semiconductor for (opto) electronic applications[J]. Semiconductor Science and Technology, 30, 024001(2015).

[16] KOIDA T. Amorphous and crystalline In2O3-based transparent conducting films for photovoltaics[J]. Physica Status Solidi (A), 214, 1600464(2017).

[17] KOIDA T, UENO Y, SHIBATA H. In2O3-based transparent conducting oxide films with high electron mobility fabricated at low process temperatures[J]. Physica Status Solidi (A), 215, 1700506(2018).

[18] CHEN Z X, HUANG L, ZHANG Q F et al. Electronic structures and transport properties of n-type-doped indium oxides[J]. The Journal of Physical Chemistry C, 119, 4789-4795(2015).

[19] HOSONO H. Ionic amorphous oxide semiconductors: material design, carrier transport, and device application[J]. Journal of Non-Crystalline Solids, 352, 851-858(2006).

[20] MITOMA N, AIKAWA S, OU-YANG W et al. Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: comparison between Si-and W-dopants[J]. Applied Physics Letters, 106, 042106(2015).

[21] PAINE D C, YAGLIOGLU B, BEILEY Z et al. Amorphous IZO-based transparent thin film transistors[J]. Thin Solid Films, 516, 5894-5898(2008).

[22] CHOI J Y, LEE S Y. Comprehensive review on the development of high mobility in oxide thin film transistors[J]. Journal of the Korean Physical Society, 71, 516-527(2017).

[23] PARTHIBAN S, KWON J Y. Role of dopants as a carrier suppressor and strong oxygen binder in amorphous indium-oxide-based field effect transistor[J]. Journal of Materials Research, 29, 1585-1596(2014).

[24] SUNDE T O L, LINDGREN M, MASON T O et al. Solid solubility of rare earth elements (Nd, Eu, Tb) in In2-xSnxO3-effect on electrical conductivity and optical properties[J]. Dalton Transactions, 43, 9620-9632(2014).

[25] AIKAWA S, NABATAME T, TSUKAGOSHI K. Si-incorporated amorphous indium oxide thin-film transistors[J]. Japanese Journal of Applied Physics, 58, 090506(2019).

[26] KAMIYA T, NOMURA K, HOSONO H. Origins of high mobility and low operation voltage of amorphous oxide TFTs: electronic structure, electron transport, defects and doping[J]. Journal of Display Technology, 5, 273-288(2009).

[27] WEN S J, CAMPET G, PORTIER J et al. Correlations between the electronic properties of doped indium oxide ceramics and the nature of the doping element[J]. Materials Science and Engineering: B, 14, 115-119(1992).

[28] ZHANG Z F, GUO Y Z, ROBERTSON J. Role of the third metal oxide in In-Ga-Zn-O4 amorphous oxide semiconductors: alternatives to gallium[J]. Journal of Applied Physics, 128, 215704(2020).

[29] TSUBUKU M, WATAKABE H, SASAKI T et al. High mobility poly-crystalline oxide TFT achieving mobility over 50 cm2/Vs and high level of uniformity on the large size substrates[J]. SID Symposium Digest of Technical Papers, 54, 78-81(2023).

[30] RABBI M H, LEE S, SASAKI D et al. Polycrystalline InGaO thin-film transistors with coplanar structure exhibiting average mobility of ≈78 cm2V-1s-1 and excellent stability for replacing current poly-Si thin-film transistors for organic light-emitting diode displays[J]. Small Methods, 6, 2200668(2022).

[31] GENG D, WANG K, LI L et al. Thin-film transistors for large-area electronics[J]. Nature Electronics, 6, 963-972(2023).

[32] KAMIYA T, NOMURA K, HOSONO H. Present status of amorphous In-Ga-Zn-O thin-film transistors[J]. Science and Technology of Advanced Materials, 11, 044305(2010).

[33] HARA Y, KIKUCHI T, KITAGAWA H et al. IGZO-TFT technology for large-screen 8K display[J]. Journal of the Society for Information Display, 26, 169-177(2018).

[34] CHO M H, CHOI C H, SEUL H J et al. Achieving a low-voltage, high-mobility IGZO transistor through an ALD-derived bilayer channel and a hafnia-based gate dielectric stack[J]. ACS Applied Materials & Interfaces, 13, 16628-16640(2021).

[35] SONG J H, KIM K S, MO Y G et al. Achieving high field-effect mobility exceeding 50 cm2/Vs in In-Zn-Sn-O thin-film transistors[J]. IEEE Electron Device Letters, 35, 853-855(2014).

[36] NOH J Y, KIM H, NAHM H H et al. Cation composition effects on electronic structures of In-Sn-Zn-O amorphous semiconductors[J]. Journal of Applied Physics, 113, 183706(2013).

[37] EDWARDS D D, MASON T O, GOUTENOIRE F et al. A new transparent conducting oxide in the Ga2O3-In2O3-SnO2 system[J]. Applied Physics Letters, 70, 1706-1708(1997).

[38] KIM J I, JI K H, JANG M et al. Ti-doped indium tin oxide thin films for transparent field-effect transistors: control of charge-carrier density and crystalline structure[J]. ACS Applied Materials & Interfaces, 3, 2522-2528(2011).

[39] KWON J Y, JEONG J K. Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors[J]. Semiconductor Science and Technology, 30, 024002(2015).

[40] LEE J, KIM D, LEE S et al. High field effect mobility, amorphous In-Ga-Sn-O thin-film transistor with no effect of negative bias illumination stress[J]. IEEE Electron Device Letters, 40, 1443-1446(2019).

[41] KIM B K, ON N, CHOI C H et al. Polycrystalline indium gallium tin oxide thin-film transistors with high mobility exceeding 100 cm2/Vs[J]. IEEE Electron Device Letters, 42, 347-350(2021).

[42] HOSONO H, KUMOMI H[M]. Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory(2022).

[43] MIYANAGA M, WATATANI K, AWATA H. Sputtering target of oxide semiconductor with high electron mobility and high stability for flat panel displays[J]. SEI Technical Review, 85, 39-43(2017).

[44] KIZU T, MITOMA N, MIYANAGA M et al. Codoping of zinc and tungsten for practical high-performance amorphous indium-based oxide thin film transistors[J]. Journal of Applied Physics, 118, 125702(2015).

[45] TAKAHASHI T, FUJII M N, MIYANAGA R et al. Unique degradation under AC stress in high-mobility amorphous In-W-Zn-O thin-film transistors[J]. Applied Physics Express, 13, 054003(2020).

[46] TOKUCHI S, SHIRANITA R, TERAMURA K et al. Oxide semiconductor In-Zn-O-X system with high electron mobility[J]. SID Symposium Digest of Technical Papers, 54, 85-88(2023).

[47] HE P H, XU H, LAN L F et al. The effect of charge transfer transition on the photostability of lanthanide-doped indium oxide thin-film transistors[J]. Communications Materials, 2, 86(2021).

[48] LAN L F, DING C C, HE P H et al. The mechanism of the photostability enhancement of thin-film transistors based on solution-processed oxide semiconductors doped with tetravalent lanthanides[J]. Nanomaterials, 12, 3902(2022).

[49] XU H, XU M, LI M et al. Trap-assisted enhanced bias illumination stability of oxide thin film transistor by praseodymium doping[J]. ACS Applied Materials & Interfaces, 11, 5232-5239(2019).

[50] LIU J D, XU H, LI M et al. Comprehensive study of improved negative-bias-illumination-temperature stress stability in terbium-doped indium-zinc-oxide thin-film transistors[J]. IEEE Transactions on Electron Devices, 70, 3563-3568(2023).

[51] YANG S, CHO D H, RYU M K et al. High-performance Al-Sn-Zn-In-O thin-film transistors: impact of passivation layer on device stability[J]. IEEE Electron Device Letters, 31, 144-146(2010).

[52] YANG S, CHO D H, RYU M K et al. Improvement in the photon-induced bias stability of Al-Sn-Zn-In-O thin film transistors by adopting AlOx passivation layer[J]. Applied Physics Letters, 96, 213511(2010).

[53] JEON G J, YANG J, LEE S H et al. Abnormal thermal instability of Al-InSnZnO thin-film transistor by hydroxyl-induced oxygen vacancy at SiOx/active interface[J]. IEEE Electron Device Letters, 42, 363-366(2021).

[54] CHO S H, KO J B, RYU M K et al. Highly stable, high mobility Al∶SnZnInO back-channel etch thin-film transistor fabricated using PAN-based wet etchant for source and drain patterning[J]. IEEE Transactions on Electron Devices, 62, 3653-3657(2015).

[55] LEE H, CHO K, KONG H et al. Electrical characteristics of flexible amorphous indium-tin-gallium-zinc oxide thin-film transistors under repetitive mechanical stress[J]. Japanese Journal of Applied Physics, 60, 090903(2021).

[56] CHOI I M, KIM M J, ON N et al. Achieving high mobility and excellent stability in amorphous In-Ga-Zn-Sn-O thin-film transistors[J]. IEEE Transactions on Electron Devices, 67, 1014-1020(2020).

[57] MORITA S, OCHI M, KUGIMIYA T. Amorphous oxide semiconductor adopting back-channel-etch type thin-film transistor[J]. Kobelco Technology Review, 34, 52-58(2016).

[58] MEDVEDEVA J E, BUCHHOLZ D B, CHANG R P H. Recent advances in understanding the structure and properties of amorphous oxide semiconductors[J]. Advanced Electronic Materials, 3, 1700082(2017).

[59] SUN T, SHI L Q, SU C Y et al. Amorphous indium-gallium-zinc-tin-oxide TFTs with high mobility and reliability[J]. SID Symposium Digest of Technical Papers, 46, 766-768(2015).

[60] HER J, MIN W K, SHIN C S et al. A new pixel circuit with selectively synchronized dual-gated IGZTO TFTs for AMOLED displays[J]. IEEE Transactions on Electron Devices, 69, 5568-5573(2022).

[61] LEE J, CHOI C H, KIM T et al. Hydrogen-doping-enabled boosting of the carrier mobility and stability in amorphous IGZTO transistors[J]. ACS Applied Materials & Interfaces, 14, 57016-57027(2022).

[62] HANYU Y, DOMEN K, NOMURA K et al. Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors[J]. Applied Physics Letters, 103, 202114(2013).

[63] STEWART K A, WAGER J F. Thin-film transistor mobility limits considerations[J]. Journal of the Society for Information Display, 24, 386-393(2016).

[64] CAO H T, LIANG L Y, ORLANDI M O. Tin Oxide-based Thin-film Transistors and Their Circuits[M], 441-476(2020).

[65] MINAMI T, SONOHARA H, TAKATA S T S et al. Highly transparent and conductive zinc-stannate thin films prepared by RF magnetron sputtering[J]. Japanese Journal of Applied Physics, 33, L1693(1994).

[66] CHIANG H Q, WAGER J F, HOFFMAN R L et al. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer[J]. Applied Physics Letters, 86, 013503(2005).

[67] MATSUDA T, UMEDA K, KATO Y et al. Rare-metal-free high-performance Ga-Sn-O thin film transistor[J]. Scientific Reports, 7, 44326(2017).

[68] KIMURA M, KAMIYA T, MATSUDA T et al. Research and applications of amorphous metal-oxide semiconductor devices—In-Ga-Zn-O and Ga-Sn-O thin-film devices[J]. SID Symposium Digest of Technical Papers, 49, 512-515(2018).

[69] LIU X Z, ZHANG J H, SHIAH Y S et al. Implementing room-temperature fabrication of flexible amorphous Sn-Si-O TFTs via defect control[J]. Advanced Materials Interfaces, 8, 2002193(2021).

[70] CHO D H, YANG S, BYUN C et al. Transparent Al-Zn-Sn-O thin film transistors prepared at low temperature[J]. Applied Physics Letters, 93, 142111(2008).

[71] JEONG J K, YANG S, CHO D H et al. Impact of device configuration on the temperature instability of Al-Zn-Sn-O thin film transistors[J]. Applied Physics Letters, 95, 123505(2009).

[72] KIM S T, SHIN Y, YUN P S et al. Achieving high carrier mobility exceeding 70 cm2/Vs in amorphous zinc tin oxide thin-film transistors[J]. Electronic Materials Letters, 13, 406-411(2017).

[73] LEI M Z, GUO L, WANG C et al. Analysis of the valence state of tin in ZnSnOx thin-film transistors[J]. Journal of Materials Science: Materials in Electronics, 33, 24785-24793(2022).

[74] KIM H S, JEON S H, PARK J S et al. Anion control as a strategy to achieve high-mobility and high-stability oxide thin-film transistors[J]. Scientific Reports, 3, 1459(2013).

[75] LEE S, NATHAN A, YE Y et al. Localized tail states and electron mobility in amorphous ZnON thin film transistors[J]. Scientific Reports, 5, 13467(2015).

[76] OK K C, JEONG H J, LEE H M et al. Comparative studies on the physical and electronic properties of reactively sputtered ZnO and ZnON semiconductors[J]. Ceramics International, 41, 13281-13284(2015).

[77] YE Y, LIM R, WHITE J M. High mobility amorphous zinc oxynitride semiconductor material for thin film transistors[J]. Journal of Applied Physics, 106, 074512(2009).

[78] YE Y, LIM R, YOU H et al. Development of high mobility zinc oxynitride thin film transistors[J]. SID Symposium Digest of Technical Papers, 44, 14-17(2013).

[79] PARK J, KIM Y S, KIM J H et al. The effects of active layer thickness and annealing conditions on the electrical performance of ZnON thin-film transistors[J]. Journal of Alloys and Compounds, 688, 666-671(2016).

[80] PARK E J, LEE H M, KIM Y S et al. Transparent flexible high mobility TFTs based on ZnON semiconductor with dual gate structure[J]. IEEE Electron Device Letters, 41, 401-404(2020).

[81] LIU C F, ZENG X Y, LIU X K et al. Investigate the sintering behavior of IZO ceramic targets prepared by pressure slip casting[J]. Research Square(2021).

[82] TOMAI S, NISHIMURA M, ITOSE M et al. High-performance thin film transistor with amorphous In2O3-SnO2-ZnO channel layer[J]. Japanese Journal of Applied Physics, 51, 03(2012).

[83] SEO H S, WU W H, LI G T et al. High mobility self-aligned coplanar and BCE IGTO semiconductor TFTs for future applications[J]. SID Symposium Digest of Technical Papers, 52, 1-4(2021).

[84] PARK S J, HA T J. Effects of Sn doping on the electrical performance and stability of sub-V operating metal-oxide thin-film transistors fabricated by oxygen annealing[J]. IEEE Electron Device Letters, 44, 642-645(2023).

[85] NAM Y, YANG J H, JEONG P et al. Effect of a rapid thermal annealing process on the electrical properties of an aluminum-doped indium zinc tin oxide thin film transistor[J]. Physica Status Solidi (a), 214, 1600490(2017).

[86] YANG B S, OH S, KIM Y J et al. The anomalous effect of oxygen ratio on the mobility and photobias stability of sputtered zinc-tin-oxide transistors[J]. IEEE Transactions on Electron Devices, 61, 2071-2077(2014).

[87] CHO D H, PARK S H K, YANG S et al. Al-Zn-Sn-O thin film transistors with top and bottom gate structure for AMOLED[J]. IEICE Transactions on Electronics, E92.C, 1340-1346(2009).

[88] HOSONO H. Approach to oxide TFTs with high mobility & stability[J]. ECS Meeting Abstracts, MA2022-02, 1255(2022).

[89] LIANG L Y, ZHANG H B, LI T et al. Addressing the conflict between mobility and stability in oxide thin-film transistors[J]. Advanced Science, 10, 2300373(2023).

[90] UM J G, MATIVENGA M, MIGLIORATO P et al. Defect generation in amorphous-indium-gallium-zinc-oxide thin-film transistors by positive bias stress at elevated temperature[J]. Journal of Applied Physics, 115, 134502(2014).

[91] LEE S, MATIVENGA M, JANG J. Removal of negative-bias-illumination-stress instability in amorphous-InGaZnO thin-film transistors by top-gate offset structure[J]. IEEE Electron Device Letters, 35, 930-932(2014).

[92] CHOWDHURY M D H, MIGLIORATO P, JANG J. Time-temperature dependence of positive gate bias stress and recovery in amorphous indium-gallium-zinc-oxide thin-film-transistors[J]. Applied Physics Letters, 98, 153511(2011).

[93] LIU P T, CHANG C H, CHANG C J. Suppression of photo-bias induced instability for amorphous indium tungsten oxide thin film transistors with bi-layer structure[J]. Applied Physics Letters, 108, 261603(2016).

[94] IDE K, NOMURA K, HOSONO H et al. Electronic defects in amorphous oxide semiconductors: a review[J]. Physica Status Solidi (A), 216, 1800372(2019).

[95] DE JAMBLINNE DE MEUX A, BHOOLOKAM A, POURTOIS G et al. Oxygen vacancies effects in a-IGZO: Formation mechanisms, hysteresis, and negative bias stress effects[J]. Physica Status Solidi (A), 214, 1600889(2017).

[96] JEONG H Y, NAM S H, PARK K S et al. Finding the cause of degradation of low-temperature oxide thin-film transistors[J]. Journal of the Korean Physical Society, 78, 284-289(2021).

[97] JEONG J K, WON YANG H, JEONG J H et al. Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors[J]. Applied Physics Letters, 93, 123508(2008).

[98] SHIAH Y S, SIM K, SHI Y H et al. Mobility-stability trade-off in oxide thin-film transistors[J]. Nature Electronics, 4, 800-807(2021).

[99] HE P H, DING C C, ZOU X M et al. Enhanced stability and mobility of solution-processed oxide thin-film transistors with bilayer terbium-incorporated indium oxide channel[J]. Applied Physics Letters, 121, 193301(2022).

[100] KIM J, BANG J, NAKAMURA N et al. Ultra-wide bandgap amorphous oxide semiconductors for NBIS-free thin-film transistors[J]. APL Materials, 7, 022501(2019).

[101] NOMURA K, KAMIYA T, HOSONO H. Stability and high-frequency operation of amorphous In-Ga-Zn-O thin-film transistors with various passivation layers[J]. Thin Solid Films, 520, 3778-3782(2012).

[102] KIM J, NAKAMURA N, KAMIYA T et al. NBIS-stable oxide thin-film transistors using ultra-wide bandgap amorphous oxide semiconductors[J]. SID Symposium Digest of Technical Papers, 47, 951-953(2016).

[103] LAN L F, XIONG N N, XIAO P et al. Enhancement of bias and illumination stability in thin-film transistors by doping InZnO with wide-band-gap Ta2O5[J]. Applied Physics Letters, 102, 242102(2013).

[104] ZHANG H B, LIANG L Y, WANG X L et al. Praseodymium-doped In-Sn-Zn-O TFTs with effective improvement of negative-bias illumination stress stability[J]. IEEE Transactions on Electron Devices, 69, 152-155(2022).

[105] GUO M, OU H, XIE D Y et al. Critical assessment of the high carrier mobility of bilayer In2O3/IGZO transistors and the underlying mechanisms[J]. Advanced Electronic Materials, 9, 2201184(2023).

[106] YANG J H, CHOI J H, CHO S H et al. Highly stable AlInZnSnO and InZnO double-layer oxide thin-film transistors with mobility over 50 cm2/V·s for high-speed operation[J]. IEEE Electron Device Letters, 39, 508-511(2018).

[107] MAGARI Y, KATAOKA T, YEH W et al. High-mobility hydrogenated polycrystalline In2O3 (In2O3∶H) thin-film transistors[J]. Nature Communications, 13, 1078(2022).

[108] CHANG K J, CHEN W T, CHANG W C et al. A-IGZO TFTs reliability improvement by dual gate structure[J]. SID Symposium Digest of Technical Papers, 46, 1203-1205(2015).

[109] PARK H J, KIM T, KIM M J et al. Improvement in performance of indium gallium oxide thin film transistor via oxygen mediated crystallization at a low temperature of 200 ℃[J]. Ceramics International, 48, 12806-12812(2022).

[110] LI W F, YANG L, GAO Z X et al. Impact of the source/drain electrode process on the mobility-threshold trade-off for InSnZnO thin-film transistors[J]. ACS Applied Electronic Materials, 5, 1615-1619(2023).

[111] YANG H, ZHANG Y Q, MATSUO Y et al. Thermopower modulation analyses of high-mobility transparent amorphous oxide semiconductor thin-film transistors[J]. ACS Applied Electronic Materials, 4, 5081-5086(2022).

[112] CHOI C H, KIM T, UEDA S et al. High-performance indium gallium tin oxide transistors with an Al2O3 gate insulator deposited by atomic layer deposition at a low temperature of 150 °C: roles of hydrogen and excess oxygen in the Al2O3 dielectric film[J]. ACS Applied Materials & Interfaces, 13, 28451-28461(2021).

[113] ZHANG Q, YANG Z, QU M Y et al. Stability of sputtered amorphous tungsten-doped indium oxide based thin-film transistors[J]. SID Symposium Digest of Technical Papers, 49, 225-227(2018).

[114] LU K K, ZHANG J H, GUO D et al. High-performance and flexible neodymium-doped indium-zinc-oxide thin-film transistor with all copper alloy electrodes[J]. IEEE Electron Device Letters, 41, 417-420(2020).

[115] LU X H, WANG K, HU H H et al. Highly reliable amorphous indium-gallium-zinc-tin-oxide TFTs with back-channel-etch structure[J]. SID Symposium Digest of Technical Papers, 48, 291-293(2017).

[116] JEONG W, WINKLER J, SCHMIDT H et al. Suppressing channel-shortening effect of self-aligned coplanar Al-doped In-Sn-Zn-O TFTs using Mo-Al alloy source/drain electrode as Cu diffusion barrier[J]. Journal of Alloys and Compounds, 859, 158227(2021).

[117] JEONG H J, LEE H M, OK K C et al. Supreme performance of zinc oxynitride thin film transistors via systematic control of the photo-thermal activation process[J]. Journal of Materials Chemistry C, 6, 5171-5175(2018).

[118] PARK J M, KIM H D, JOH H et al. Metal-induced n+/n homojunction for ultrahigh electron mobility transistors[J]. NPG Asia Materials, 12, 81(2020).

[119] HE J Y, HU H H, NING C et al. Development of oxide UHD panel LCD with high mobility for notebook PC[J]. SID Symposium Digest of Technical Papers, 54, 1477-1480(2023).

[120] KIM H J, MAENG M J, PARK J H et al. Chemical and structural analysis of low-temperature excimer-laser annealing in indium-tin oxide sol-gel films[J]. Current Applied Physics, 19, 168-173(2019).