Chinese Journal of Liquid Crystals and Displays, Volume. 39, Issue 4, 447(2024)
Research progress of high mobility metal oxide semiconductor thin film transistors
Fig. 1. （a）Transistor I-V characteristic comparison；（b）Hall μ-Ne plots of IGO and IGZO films using 4 in（1 in=2.54 cm）and Gen.6 size sputtering target；（c）PBTS and（d）NBTIS results of IGO TFTs；（e）Crystallinity of oxide semiconductor［29］.
Fig. 2. （a）Cross-sectional SEM image of the coplanar poly-IGO TFT；（b）Magnification of the active layer showing highly aligned poly-IGO，there inset is the FFT electron diffraction patterns of the（222）crystal orientation；（c）High magnification image of IGO active layer；（d）Poly-IGO TFTs performance parameters（Vth，SS，µFE，µsat）；（e）NBTS stability of the poly-InGaO TFTs after N2O annealing［30］.
Fig. 3. Contour mapping results of（a）μFE and（b）Vth of the ALD-derived a-IGZO TFTs［34］；（c）picture of Gen.8.6 IGZO rotating target manufactured for the first time in China.
Fig. 4. Comparison of TFT parameters between a-IGZO and a-IGTO TFTs.（a）Plots of ΔVth as a function of the applied VTG；NBIS result of（b）a-IGTO and（c）a-IGZO TFTs；（d）Plots of μFE as a function of Vth for both a-IGTO and a-IGZO TFTs；Energy level diagram of（e）a-IGTO and（f）a-IGZO after NBIS［40］.
Fig. 5. SEM-BSE images of（a）Ta-IZO，（b）Nb-IZO and（c）W-IZO bulks with their EDS mapping of X element；（d）Transfer curves of X-IZO TFTs；（e）PBTS and（f）NBTS results of several X-IZO TFTs［46］.
Fig. 6. （a）Ln-IZO TFTs back panel array and（b）photograph of the transparent display；（c）μsat and SS extracted from the Pr∶IZO TFTs［48］.
Fig. 7. （a）Schematic diagram of a-IGZTO TFTs on a CPI substrate and optical images of a-IGZTO TFTs in flat and bent states inside a custom-made bending machine；（b）Variations of the electrical characteristics under repetitive mechanical stress［55］；（c）Schematic energy band diagrams of the relative energy position of the Fermi level（EF）with respect to the CBM（ECB）and VBM（EVB）for the IGZO and IGZTO films annealed at 300 ℃ and 400 ℃［56］.
Fig. 8. （a）Schematic diagram of the cross-sectional structure and（b）cross-sectional SEM image of the double-gate TFT［60］
Fig. 9. （a）Schematic profiles of the CBM（EC）in（a）poly-crystalline ZnO，（b）a-InGaZnO，and（c）a-ZnON，respectively；（d）Schematic diagram of trap-limited conduction associated with the localized tail states［76］.
Fig. 10. Diagram of the barrel effect of MOS TFTs characteristics［89］
Fig. 11. Design concept of conventional and novel bilayer-channel MOS TFTs［89］
Table 1. Comparison of comprehensive characteristics of different channel materials
View tableView in ArticleTable 1. Comparison of comprehensive characteristics of different channel materials
分类 对比项目 a-Si∶H TFTs LTPS TFTs MOS TFTs 技术性能 典型材料 a-Si poly-Si a-IGZO 带隙Eg/eV 1.4~1.8 1.1 2.7~4.0 可见光透过率 较差 中等 较好 场效应迁移率μFE/（cm2·V-1·s-1） 0.5~1 50~100 10~80 关态漏电流（A·μm-1） ≤10-13 ≤10-12 ≤10-16 开关电流比Ion/Ioff ~106 ~107 107~1011 阈值电压Vth 中等 较高 较低 亚阈值摆幅SS/（mV·dec-1） 400~500 200~300 90~200 偏压稳定性ΔVth 较差（>10 V） 优良（<1 V） 中等（<5V） TFT均匀性 较好 中等 优良 触控灵敏度 较差 中等 优良 图像刷新率/Hz ~60 30~600 0.5~600 像素分辨率/PPI ≤300 300~700 350~800 功耗水平 中等 较高 较低 柔性能力 较差 中等 优良 生产性能 沉积方式 PECVD ELA PVD 制程温度/℃ 150~350 250~550 RT~350 最大基板尺寸 Gen.11 Gen.6 Gen.11 显示应用模式 LCD LCD；OLED；QLED；Micro-LED LCD；OLED；QLED；Micro-LED；E-paper 成本/良率 低/高 高/低 低/高 技术发展潜力 无 较小 较高
Table 2. Characteristics comparison of various high mobility MOS TFTs
View tableView in ArticleTable 2. Characteristics comparison of various high mobility MOS TFTs
MOS Annealed/℃ μFE/（cm2·V-1·s-1） Vth/V SS/（mV·dec-1） Ion/Ioff NB（T）S/PB（T）SΔVth/V NB（T）IS ΔVth/V Ref. poly-In2O3∶H 300 139.2 0.20 190 - -4.40/+0.02 - ［ 107 ］a-IGZO 253 8.66 0.10 310 - -4.79/+0.72 -7.49 ［ 108 ］poly-IGO 200 56.00 0.10 100 108 -0.10/+0.80 -1.00 ［ 109 ］a-ITZO 350 87.10 -0.64 260 108 -0.45/+1.11 - ［ 110 ］a-ITZO 350 58.00 -5.50 70 109 -1.50/+1.20 - ［ 111 ］a-IGTO 350 25.00 -0.75 - - -/+2.60 -3.40 ［ 83 ］a-IGTO 150 58.80 0.50 120 109 -0.15/+0.10 -0.21 ［ 112 ］poly-IGTO 400 116.5 0.47 134 109 -/+0.17 - ［ 41 ］a-IWO 100 27.55 0.50 500 108 -0.92/+4.50 -6.50 ［ 113 ］a-IWZO 350 35.00 0.80 80 - 0.07/+0.40 - ［ 43 ］a-Nd∶IZO 380 32.10 0.42 160 107 -0.28/+2.46 - ［ 114 ］a-Ta∶IZO 350 72.00 0.41 190 109 -0.30/+0.10 - ［ 46 ］a-IGZTO - 11.00 0.6~0.8 200 108 -/+4.40 -1.70 ［ 115 ］a-IGZTO 400 46.70 -3.70 150 108 -0.40/+0.50 - ［ 58 ］a-IGZTO∶H 400 85.90 -0.49 330 108 -0.16/+0.42 - ［ 60 ］a-Al∶ITZO 230 34.46 -0.50 110 107 -0.25/+0.28 - ［ 116 ］a-ITZO/Pr∶ITZO 350 75.50 -0.04 170 108 -0.18/+0.76 -1.64 ［ 89 ］a-ZTO 350 21.60 -1.80 340 109 0.50/+0.22 -1.98 ［ 86 ］Ta/a-ZTO 200 70.80 -1.30 180 108 ~0/+0.40 - ［ 71 ］a-ZnON 150 52.50 -2.00 550 108 -0.85/+1.26 - ［ 117 ］Al/a-ZBTO 350 153.0 -0.77 370 109 -0.13/+0.09 - ［ 118 ］
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Qiang LI, Chunqiao GE, Lu CHEN, Weiping ZHONG, Qiying LIANG, Chunxi LIU, Jinduo DING. Research progress of high mobility metal oxide semiconductor thin film transistors[J]. Chinese Journal of Liquid Crystals and Displays, 2024, 39(4): 447
Category: Research Articles
Received: Jan. 23, 2024
Accepted: --
Published Online: May. 28, 2024
The Author Email: Chunqiao GE (gechunqiao@zhilong.pro)
