Fig. 1. Schematic diagram of OTFT structure. (a) Bottom gate top contact; (b) bottom gate bottom contact; (c) top gate top contact; (d) top gate bottom contact

Fig. 2. Trap DOS of the original Grünewald et al. method (black line) and the extended Grünewald et al. method (red line)^[52]. (a) TFT with thick gate dielectric; (b) TFT with thin gate dielectric

Fig. 3. Schematic diagram of PECCS experimental device

Fig. 4. DOS distribution of deep level interface traps of (a) pristine and (b) UV-irradiated pentacene-TFTs^[62]

Fig. 5. DOS distribution of pure and hybrid membranes measured by ER-EIS^[69]. (a) MeLPPP; (b) SF-PDI₂; (c) PC₆₀BM; (d) MeLPPP∶SF-PDI₂(1∶1); (e) MeLPPP∶PC₆₀BM(1∶1)

Fig. 6. Density of states above the valence band for four rubrene single crystals^[76]

Fig. 7. Schematic diagram of TSC technology experimental device

Fig. 8. TSC spectra of monolayer devices^[80]. (a) 1-NaphDATA; (b)(c) α-NPD

Fig. 9. Schematic diagram of the KPFM system for AM and FM modes (lower part of the figure is the FM mode AFM system used for topography imaging, and the upper part is the KPFM system used for CPD measurement)^[90]

Fig. 10. DOS of pentacene thin film transistors^[91]. (a) Treated by HMDS; (b) untreated (black, blue, and red solid lines represent the three positions along the channel)