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Acta Optica Sinica, Volume. 44, Issue 9, 0928003(2024)

Experiment and Analysis of Damage Effect of Proton Irradiation on Transmission Transistor of CMOS Image Sensor

Ning Tang1, Zujun Wang1,2、*, Shixing Yan1, Chuanzhou Li1, and Rongyu Jiang1
Author Affiliations
  • 1School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan , China
  • 2National Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi an 710024, Shaanxi , China
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    References (24)
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    Figures & Tables(8)
    6T CIS transmission grating single-tube device diagram

    Fig. 1. 6T CIS transmission grating single-tube device diagram

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    Schematic diagram of pixel structure circuit of 6T CIS

    Fig. 2. Schematic diagram of pixel structure circuit of 6T CIS

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    Test results of electrical parameters after 60 MeV proton irradiation. (a) Variation curve of threshold voltage change value (ΔVth) with proton fluence; (b) variation curve of saturation current variation value (ΔIds) with proton fluence

    Fig. 3. Test results of electrical parameters after 60 MeV proton irradiation. (a) Variation curve of threshold voltage change value (ΔVth) with proton fluence; (b) variation curve of saturation current variation value (ΔIds) with proton fluence

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    Annealing test results of electrical parameters after 60 MeV proton irradiation. (a) Variation curves of threshold voltage change value with annealing time; (b) variation curves of saturation current change value with annealing time

    Fig. 4. Annealing test results of electrical parameters after 60 MeV proton irradiation. (a) Variation curves of threshold voltage change value with annealing time; (b) variation curves of saturation current change value with annealing time

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    Simulation model of MOS structure of 6T CIS transmission single-tube

    Fig. 5. Simulation model of MOS structure of 6T CIS transmission single-tube

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    Schematic diagram of Ids-Vgs curves fitting between simulation model and actual device before irradiation

    Fig. 6. Schematic diagram of Ids-Vgs curves fitting between simulation model and actual device before irradiation

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    Schematic diagram of Ids-Vgs curves fitting between simulation model and actual device after irradiation

    Fig. 7. Schematic diagram of Ids-Vgs curves fitting between simulation model and actual device after irradiation

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    Comparison curves between simulation and experimental results after irradiation. (a) Variation curves of threshold voltage change value with proton fluence; (b) variation curves of saturation current variation value with proton fluence

    Fig. 8. Comparison curves between simulation and experimental results after irradiation. (a) Variation curves of threshold voltage change value with proton fluence; (b) variation curves of saturation current variation value with proton fluence

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    Ning Tang, Zujun Wang, Shixing Yan, Chuanzhou Li, Rongyu Jiang. Experiment and Analysis of Damage Effect of Proton Irradiation on Transmission Transistor of CMOS Image Sensor[J]. Acta Optica Sinica, 2024, 44(9): 0928003

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    Paper Information

    Category: Remote Sensing and Sensors

    Received: Jan. 2, 2024

    Accepted: Feb. 26, 2024

    Published Online: May. 10, 2024

    The Author Email: Zujun Wang (wzj029@qq.com)

    DOI:10.3788/AOS240439

    CSTR:32393.14.AOS240439

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology