Chinese Journal of Lasers, Volume. 48, Issue 24, 2403001(2021)
Influence of Diffusion Barriers with Different Al Compositions on Impurity-Free Vacancy Induced Quantum Well Mixing
Fig. 1. Epitaxial structure of 975 nm semiconductor laser. (a) Sample 1; (b) sample 2
Fig. 3. Influence of annealing temperature on PL spectral intensity. (a) Sample 1; (b) sample 2
Fig. 4. Influence of annealing time on quantum well mixing. (a) Influence on wavelength blue shift; (b) influence on PL spectral intensity
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Naling Zhang, Hongqi Jing, Qinghe Yuan, Li Zhong, Suping Liu, Xiaoyu Ma. Influence of Diffusion Barriers with Different Al Compositions on Impurity-Free Vacancy Induced Quantum Well Mixing[J]. Chinese Journal of Lasers, 2021, 48(24): 2403001
Category: materials and thin films
Received: Mar. 23, 2021
Accepted: May. 17, 2021
Published Online: Nov. 16, 2021
The Author Email: Jing Hongqi (jinghq@semi.ac.cn)