Influence of Diffusion Barriers with Different Al Compositions on Impurity-Free Vacancy Induced Quantum Well Mixing

Naling Zhang; Hongqi Jing; Qinghe Yuan; Li Zhong; Suping Liu; Xiaoyu Ma

doi:10.3788/CJL202148.2403001

Chinese Journal of Lasers, Volume. 48, Issue 24, 2403001(2021)

Influence of Diffusion Barriers with Different Al Compositions on Impurity-Free Vacancy Induced Quantum Well Mixing

Naling Zhang^1,2, Hongqi Jing^1、*, Qinghe Yuan^1,2, Li Zhong¹, Suping Liu¹, and Xiaoyu Ma^1,2

¹National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

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Naling Zhang, Hongqi Jing, Qinghe Yuan, Li Zhong, Suping Liu, Xiaoyu Ma. Influence of Diffusion Barriers with Different Al Compositions on Impurity-Free Vacancy Induced Quantum Well Mixing[J]. Chinese Journal of Lasers, 2021, 48(24): 2403001

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Paper Information

Category: materials and thin films

Received: Mar. 23, 2021

Accepted: May. 17, 2021

Published Online: Nov. 16, 2021

The Author Email: Jing Hongqi (jinghq@semi.ac.cn)

DOI:10.3788/CJL202148.2403001

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology