[1] [1] R. A. Ismail, O. A. Abdulrazaq, A. A. Hadi, and O. A. Hamadi, “Full characterization at 904 nm of large area Si p-n junction photodetectors produced by laser-induced diffusion,” International Journal of Modern Physics, 2007, 19(31): 197-201.

[2] [2] M. Consales, M. Pisco, and A. Cusano, “Lab-on-fiber technology: a new avenue for optical nanosensors,” Photonic Sensors, 2012, 2(4): 289-314.

[3] [3] C. Chen, H. Wang, Z. Jiang, X. Jin, and J. Luo, “Design, fabrication, and measurement of two silicon-based ultraviolet and blue-extended photodiodes,” Photonic Sensors, 2014, 4(4): 373-378.

[4] [4] D. Viveiros, J. Ferreira, S. O. Silva, J. Ribeiro, D. Flores, J. L. Santos, et al., “Ammonia sensing system based on wavelength modulation spectroscopy,” Photonic Sensors, 2015, 5(2): 109-115.

[5] [5] J. Dresner and F. V. Shallcross, “Crystallinity and electronic properties of evaporated CdS films,” Journal of Applied Physics, 1963, 34(8): 2390-2395.

[6] [6] O. A. Hamadi and K. Z. Yahiya, “Optical and electrical properties of selenium-antimony heterojunction formed on silicon substrate,” Journal of Pure and Applied Sciences, 2007, 4(2): 1-11.

[7] [7] O. A. Hamadi, B. A. M. Bader, and A. K. Yousif, “Electrical characteristics of silicon p-n junction solar cells produced by plasma-assisted matrix etching technique,” Engineering and Technics, 2008, 26(8): 995-1001.

[8] [8] R. A. Ismail, O. A. Abdulrazaq, A. A. Hadi, and O. A. Hamadi, “Full characterization at 904 nm of Si p-n junction photodetectors produced by LID technique,” International Journal of Modern Physics B, 2007, 19(31): 197-201.

[9] [9] A. K. Yousif and O. A. Hamadi, “Plasma-induced etching of silicon surfaces,” Bulgarian Journal Physics, 2008, 35(3): 191-197.

[10] [10] O. A. Hamadi, “Characteristics of CdO-Si heterostructure produced by plasma-induced bonding technique,” Proceedings of the Institution of Mechanical Engineers Part L Journal of Materials Design and Applications, 2008, 222: 65-71.

[11] [11] O. A. Hamadi, “Effect of annealing on the electrical characteristics of CdO-Si heterostructure produced by plasma-induced bonding technique,” Iraqi Journal of Applied Physics, 2008, 4(3): 34-37.

[12] [12] A. A. K. Hadi and O. A. Hamadi, “Optoelectronic characteristics of As-doped silicon photodetectors produced by LID technique,” Iraqi Journal of Applied Physics, 2008, 1(2): 23-26.

[13] [13] O. A. Hammadi, “Photovoltaic properties of thermally-grown selenium-doped silicon photodiodes for infrared detection applications,” Photonic Sensors, 2015, 5(2): 152-158.

[14] [14] O. A. Hammadi, M. K. Khalaf, and F. J. Kadhim, “Silicon nitride nanostructures prepared by reactive sputtering using closed-field unbalanced dual magnetrons,” Proceedings of the Institution of Mechanical Engineers Part L Journal of Materials Design and Applications, 2015, 229(5).

[15] [15] O. A. Hammadi, M. K. Khalaf, and F. J. Kadhim, “Fabrication of UV photodetector from nickel oxide nanoparticles deposited on silicon substrate by closed-field unbalanced dual magnetron sputtering techniques,” Optical and Quantum Electronics, 2015, 47(2): 1-9.

[16] [16] O. A. Hammadi, M. K. Khalaf, and F. J. Kadhim, “Fabrication and characterization of UV photodetectors based on silicon nitride nanostructures prepared by magnetron sputtering,” Proceedings of the Institution of Mechanical Engineers Part N Journal of Nanoengineering and Nanosystems, 2015, 230(1): 32-36.

[17] [17] O. A. Hammadi and N. E. Naji, “Electrical and spectral characterization of CdS/Si heterojunction prepared by plasma-induced bonding,” Optical and Quantum Electronics, 2016, 48(8): 1-7.

[18] [18] O. A. Hammadi, M. K. Khalaf, F. J. Kadhim, and B. T. Chiad, “Operation characteristics of a closed-field unbalanced dual-magnetrons plasma sputtering system,” Bulgarian Journal Physics, 2014, 41(1): 24-33.