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Photonic Sensors, Volume. 6, Issue 4, 345(2016)

Characteristics of Heat-Annealed Silicon Homojunction Infrared Photodetector Fabricated by Plasma-Assisted Technique

Oday A. HAMMADI*
Author Affiliations
  • Department of Physics, College of Education, Al-Iraqia University, Baghdad, IRAQ
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    Oday A. HAMMADI. Characteristics of Heat-Annealed Silicon Homojunction Infrared Photodetector Fabricated by Plasma-Assisted Technique[J]. Photonic Sensors, 2016, 6(4): 345

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    Paper Information

    Category: Regular

    Received: May. 2, 2016

    Accepted: Aug. 27, 2016

    Published Online: Oct. 21, 2016

    The Author Email: HAMMADI Oday A. (odayata2001@yahoo.com)

    DOI:10.1007/s13320-016-0338-4

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology