Acta Physica Sinica, Volume. 68, Issue 21, 217102-1(2019)

Enhancing oxygen vacancy photocatalytic efficiency of bismuth tungstate using In-doped W site

Ze-Pu Wang1, Nian Fu2, Han Yu1, Jing-Wei Xu1, Qi He1, Shu-Kai Zheng1、*, Bang-Fu Ding1、*, and Xiao-Bing Yan1
Author Affiliations
  • 1College of Electronic Information Engineering, Hebei University, Baoding 071002, China
  • 2College of Physics Science and Technology, Hebei University, Baoding 071002, China
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    References(20)

    [7] Lu Q, Hua L G, Chen Y L, Gao B F, Lin B Z[J]. J. Inorg. Mater., 30, 413(2015).

    [8] Xu X T, Wang F, Huang H J, Ji L L, Meng J M, Deng H J[J]. Chinese Patent CN 106390992 A(2017).

    [12] Hao L, Zhang H N, Yan J C, Cheng L J, Guan S J, Lu Y[J]. J. Tianjin Univ. Sci. Tech., 33, 1(2018).

    [17] Li H Q, Zheng S K, Ding B F, Yan X B[J]. Chin. Powder. Sci. Tech., 24, 19(2018).

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    Ze-Pu Wang, Nian Fu, Han Yu, Jing-Wei Xu, Qi He, Shu-Kai Zheng, Bang-Fu Ding, Xiao-Bing Yan. Enhancing oxygen vacancy photocatalytic efficiency of bismuth tungstate using In-doped W site[J]. Acta Physica Sinica, 2019, 68(21): 217102-1

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    Paper Information

    Received: Jul. 1, 2019

    Accepted: --

    Published Online: Sep. 17, 2020

    The Author Email: Ding Bang-Fu (dbf1982@126.com)

    DOI:10.7498/aps.68.20191010

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