Fig. 1. Schematic diagram of sol-gel method for bismuth tungstate powder preparation.溶胶-凝胶法制备钨酸铋粉体实验流程图

Fig. 2. XRD patterns of the ICSD simulation and different concentration In-doped bismuth tungstate (a), as well as optimized orthogonal bismuth tungstate structure model (b).ICSD模拟和不同浓度铟掺杂钨酸铋XRD图谱(a)和优化完正交钨酸铋结构模型(b)

Fig. 3. Microscopic morphology of samples: (a) Pure phase, (b) 5 at%, (c) 7 at%, and (d) 10 at% In-Bi₂WO₆样品微观形貌结构图　(a)纯相, (b) 5 at%, (c) 7 at%, (d) 10 at% In-Bi₂WO₆

Fig. 4. Degradation efficiency of In-doped bismuth tungstate (a) and the first-order reaction rate constant (b).不同铟掺杂钨酸铋的降解效率(a)和一级反应速率常数柱状图(b)

Fig. 5. O1 s XPS spectra and Gaussian peaks of pure phase (a) and 7% In-doped Bi₂WO₆ (b). 纯相(a)和7%铟掺杂(b) Bi₂WO₆的O 1 s XPS光谱以及Gaussian分峰

Fig. 6. Diffuse reflectance spectra of pure and 7 at% In-doped samples (a) and band gap values fitted by K-M equation (b).纯的和7 at%铟掺杂样品的漫反射光谱(a)和K-M方程拟合的带隙值(b)

Fig. 7. Schematic diagram of four model structures (a) and corresponding formation energy variation (b).(a)四种模型结构示意图及其(b)相应形成能变化趋势

Fig. 8. Pure phase (a), (b) and single oxygen vacancy (c), (d) model electronic structure: (a), (c) Energy band diagram; (b), (d) density of states (DOS).纯相(a), (b)和单一氧空位(c), (d)模型电子结构　(a), (c) 能带图; (b), (d) 态密度图