Fig. 1. Schematic of the femtosecond laser direct writing system

Fig. 2. Schematic of the fabrication of different types of embedded micro lenses. (a) VMBL obtained under a lower power intensity; (b) CMBL obtained under a higher power intensity

Fig. 3. (a) CMBL diameter versus theaverage laser power. Inserts are the CMBLs under different laser power; (b) VMBL and its image size versus the cooling time. Inserts are the images when the cooling time is 0 min and 80 min

Fig. 4. (a) Micro-telescope system composed of micro lens and microscopic objective; (b) mask image taken as VMBL is the front lens; (c) mask image taken as CMBL is the front lens; (d) super-wide-angle imaging experiment

Fig. 5. (a)-(d) Schematic of the fabrication process of the rGO/Au super capacitor by femtosecond laser direct writing; (e)-(f) digital photo and scanning electron microscope (SEM) photo of the capacitor

Fig. 6. Property comparison of the rGO/Au and rGO capacitors fabricated by femtosecond laser and continuous laser. (a)(b) Constant voltage test curves when the scan rate is 1 V·s-1 and 100 V·s-1, respectively; (c) solid line is the galvanostatic test curve of the rGO/Au FS super capacitor when the discharge current is from 50 μA to 500 μA, and dashed line is the charge-discharge curve of the rGO FS capacitor under 500 μA; (d) relationship between the scan rate and

Fig. 7. (a) Schematic of 3D laser direct writing multilayer capacitor; (b) cross section of the PI substrate after laser direct writing

Fig. 8. (a) Charge and discharge performance test results and (b) specific capacitance of the multilayer 3D super capacitor

Fig. 9. (a) Schematic, (b) photo, and (c) SEM image of the laser direct writing PI electrode; (d) photo of the assembled sensor

Fig. 10. (a) Detection result of the BPA samples; (b) schematic of the ACEO principle of the capacitive-type sensor