Journal of Infrared and Millimeter Waves, Volume. 40, Issue 5, 576(2021)
Numerical simulation of high-operating-temperature MWIR HgCdTe APD detectors
Figures & Tables(8)
Fig. 2. Comparison of dark current curves between experiment and numerical simulation of avalanche devices
Fig. 3. Changes of the dark current density of APD devices at different temperatures
Fig. 4. Different dark current mechanisms affecting devices at different operating temperatures (a)80K (b)100K，(c)150K，(d)200K
Fig. 5. The dark current density and gain of HgCdTe APD change with different Ni layer thickness（a）Dark current density（b）Gain
Fig. 6. The dark current density and gain of HgCdTe APD change with different doping of Ni layer（a）Dark current density（b）Gain
Table 1. Device structure parameters involved in numerical simulation
View tableView in ArticleTable 1. Device structure parameters involved in numerical simulation
参数 N+层 Ni层 P层 厚度（μm） 2 2.98 10 掺杂浓度（cm-3） 5×1017 1×1014 8×1015 组分 0.3 0.3 0.3
Table 2. Optimized Structural parameters of HOT HgCdTe APD
View tableView in ArticleTable 2. Optimized Structural parameters of HOT HgCdTe APD
参数 N+层 Ni层 P层 厚度（μm） 1～2 2～3 9～10 掺杂浓度（cm-3） ≥5×1016 ≤1×1015 ≥3×1016 组分 0.3 0.3 0.3
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Chuan SHEN, Liao YANG, Hui-Jun GUO, Dan YANG, Lu CHEN, Li HE. Numerical simulation of high-operating-temperature MWIR HgCdTe APD detectors[J]. Journal of Infrared and Millimeter Waves, 2021, 40(5): 576
Paper Information
Category: Research Articles
Received: Nov. 4, 2020
Accepted: --
Published Online: Sep. 29, 2021
The Author Email: Lu CHEN (chenlu@mail.sitp.ac.cn)
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