Journal of Infrared and Millimeter Waves, Volume. 40, Issue 5, 576(2021)

Numerical simulation of high-operating-temperature MWIR HgCdTe APD detectors

Chuan SHEN1, Liao YANG1, Hui-Jun GUO1, Dan YANG1, Lu CHEN1,2、*, and Li HE1
Author Affiliations
  • 1Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China
  • 2Hangzhou Insitute for Advanced Study,University of Chinese Academy of Sciences,Hangzhou 310024,China
  • show less

    In this paper, 2-D numerical simulation was used to simulate the structure of MWIR HgCdTe APD, and the structural parameters of APD devices at 80K were obtained by comparing with the experimental results. At the same time, the influence of dark current mechanism on APD devices at different operating temperatures was studied. The performance of APD devices with the change of each parameter under the condition of high operating temperature was studied. We proposed the optimal HgCdTe APD structure for achieving high performance at 150K. The structure provides an important reference for the subsequent development of APD devices with high operating temperature.

    Tools

    Get Citation

    Copy Citation Text

    Chuan SHEN, Liao YANG, Hui-Jun GUO, Dan YANG, Lu CHEN, Li HE. Numerical simulation of high-operating-temperature MWIR HgCdTe APD detectors[J]. Journal of Infrared and Millimeter Waves, 2021, 40(5): 576

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: Research Articles

    Received: Nov. 4, 2020

    Accepted: --

    Published Online: Sep. 29, 2021

    The Author Email: Lu CHEN (chenlu@mail.sitp.ac.cn)

    DOI:10.11972/j.issn.1001-9014.2021.05.002

    Topics