Fig. 1. Development of lithography machine for ASML under Moore's Law^[2]

Fig. 2. Schematic diagram of EUV lithography lighting and objective^[5]

Fig. 3. Schematic diagram of differential equation method^[61]

Fig. 4. Layout of EUV four-mirror objective is obtained by solving the first order aberration equations^[64]. (a) Layout of the four-mirror objective; (b) MTF of the four-mirror objective

Fig. 5. Schematic diagram of EUV lithographic objective obtained by paraxial search method^[70]. (a) Layout of NA is 0.1 four-mirror objective; (b) layout of NA is 0.25 six-mirror objective

Fig. 6. Schematic diagram of the saddle point construction method^[71-73]. (a) Layout of six-mirror objective; (b) layout of eight-mirror objective

Fig. 7. Layout of NA is 0.33 EUV lithography projection objective by group design method^[88]

Fig. 8. Layout of NA is 0.25 EUV lithography projection objective by Seidel aberration solution^[89]

Fig. 9. Structure of anamorphic EUV lithographic projection objective^[90,96] . (a) Layout of NA is 0.5 EUV lithography projection objective; (b) layout of NA is 0.55 EUV lithography projection objective

Fig. 10. Large off-axis NA is 0.55 anamorphic EUV lithography projection objective^［91］

Fig. 11. NA is 0.55 anamorphic EUV lithography projection objective^[92]

Fig. 12. Schematic diagram of EUV lighting system

Fig. 13. Layout of the ripple plate illumination system^[103]

Fig. 14. EUV illumination system matching the NA is 0.6 anamorphic objective^[100]

Fig. 15. EUV illumination system matching the NA is 0.5 anamorphic objective^[115]

Fig. 16. EUV illumination system matching the NA is 0.55 anamorphic objective^[117]