Influence of APS bias voltage on properties of HfO2 and SiO2 single layer deposited by plasma ion-assisted deposition

Meiping Zhu; Kui Yi; Zhengxiu Fan; Jianda Shao

doi:10.3788/COL201109.023101

Chinese Optics Letters, Volume. 9, Issue 2, 023101(2011)

Influence of APS bias voltage on properties of HfO2 and SiO2 single layer deposited by plasma ion-assisted deposition

Meiping Zhu^1,2, Kui Yi¹, Zhengxiu Fan¹, and Jianda Shao¹

¹Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

²Graduate University of the Chinese Academy of Sciences, Beijing 100049, China

show less

References(10)

[1] [1] F. Placido, D. Gibson, E. Waddell, and E. Grossan, Proc. SPIE 6286, 628602 (2006).

[2] [2] A. Zoeller, S. Beisswenger, R. Goetzelmann, and K. Matl, Proc. SPIE 2253, 394 (1994).

[3] [3] O. Stenzel, S. Wilbrandt, N. Kaiser, M. Vinnichenko, F. Munnik, A. Kolitsch, A. Chuvilin, U. Kaiser, J. Ebert, and S. Jakobs, Thin Solid Films 517, 6058 (2009).

[4] [4] R. Thielsch, A. Gatto, J. Heber, and N. Kaiser, Thin Solid Films 410, 86 (2002).

[5] [5] M. L. Fulton, Proc. SPIE 2253, 374 (1994).

[6] [6] M. Zhu, K. Yi, W. Zhang, Z. Fan, H. He, and J. Shao, Chin. Opt. Lett. 8, 624 (2010).

[7] [7] X. Liu, D. Li, X. Li, Y. Zhao, and J. Shao, Chinese J. Lasers (in Chinese) 36, 1545 (2009).

[8] [8] P. Ma, F. Pan, S. Chen, Z. Wang, J. Hu, Q. Zhang, and J. Shao, Chin. Opt. Lett. 7, 643 (2009).

[9] [9] S. Fan, H. He, J. Shao, Z. Fan, and D. Zhang, Proc. SPIE 5774, 531 (2004).

[10] [10] D. Patel, P. Langston, A. Markosyan, E. M. Krous, F. M. Krous, B. Langdon, F. Furch, B. Reagan, R. Route, M. M. Fejer, J. J. Rocca, and C. S. Menoni, Proc. SPIE 7132, 71320L (2008).

Cited By

[1] Meiping Zhu, Kui Yi, Detlef Arhilger, Hongji Qi, Jianda Shao. Effect of Advanced Plasma Source bias voltage on properties of HfO2 films prepared by plasma ion assisted electron evaporation from metal hafnium. Thin Solid Films, 540, 17(2013).

Tools

Get Citation

Copy Citation Text

Meiping Zhu, Kui Yi, Zhengxiu Fan, Jianda Shao, "Influence of APS bias voltage on properties of HfO2 and SiO2 single layer deposited by plasma ion-assisted deposition," Chin. Opt. Lett. 9, 023101 (2011)

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Received: Jul. 16, 2010

Accepted: Sep. 28, 2010

Published Online: Mar. 3, 2011

The Author Email:

DOI:10.3788/COL201109.023101

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology