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Chinese Optics Letters, Volume. 9, Issue 2, 023101(2011)

Influence of APS bias voltage on properties of HfO2 and SiO2 single layer deposited by plasma ion-assisted deposition

Meiping Zhu1,2, Kui Yi1, Zhengxiu Fan1, and Jianda Shao1
Author Affiliations
  • 1Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 2Graduate University of the Chinese Academy of Sciences, Beijing 100049, China
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    Meiping Zhu, Kui Yi, Zhengxiu Fan, Jianda Shao, "Influence of APS bias voltage on properties of HfO2 and SiO2 single layer deposited by plasma ion-assisted deposition," Chin. Opt. Lett. 9, 023101 (2011)

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    Paper Information

    Received: Jul. 16, 2010

    Accepted: Sep. 28, 2010

    Published Online: Mar. 3, 2011

    The Author Email:

    DOI:10.3788/COL201109.023101

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology