INFRARED, Volume. 46, Issue 5, 17(2025)

Study on the Particle Cleaning Mechanism of Silicon-Based Infrared Chip After Polishing

Teng-da MA*, Sheng-xian XU, Hao-ran LI, Hao SHI, and Hui WANG
Author Affiliations
  • North China Research Institute of Electro-Optics, Beijing 100015
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    The backside polishing quality of silicon-based infrared devices directly affects the performance parameters of the chips, and the cleaning treatment after polishing will also affect the reliability of subsequent processes. Cleaning of particles adsorbed on the surface of materials is a hot topic in current research. The cleaning effect of anionic surfactant (sodium dodecyl sulfate (SDS)) on silicon wafer particles after silica sol polishing is explored, and the cleaning mechanism is deeply analyzed using molecular simulation methods. The results show that when the concentration of SDS is high, a bilayer adsorption morphology can be formed on the surface of SiO2 particles, and a negative charge state is presented on the outermost layer. This forms an electrostatic repulsion force with the negative charge on the surface of the silicon wafer in an acidic environment, thereby effectively cleaning the SiO2 particles.

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    MA Teng-da, XU Sheng-xian, LI Hao-ran, SHI Hao, WANG Hui. Study on the Particle Cleaning Mechanism of Silicon-Based Infrared Chip After Polishing[J]. INFRARED, 2025, 46(5): 17

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    Paper Information

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    Received: Oct. 21, 2024

    Accepted: Jun. 12, 2025

    Published Online: Jun. 12, 2025

    The Author Email: MA Teng-da (1498695847@qq.com)

    DOI:10.3969/j.issn.1672-8785.2025.05.003

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