Interfacial properties between Al2O3 and In0.74Al0.26As epitaxial layer on MIS capacitors

Lu-Hong WAN; Xiu-Mei SHAO; Xue LI; Yi GU; Ying-Jie MA; Tao LI

doi:10.11972/j.issn.1001-9014.2022.02.002

Journal of Infrared and Millimeter Waves, Volume. 41, Issue 2, 384(2022)

Interfacial properties between Al₂O₃and In_0.74Al_0.26As epitaxial layer on MIS capacitors

Lu-Hong WAN^1,2,3, Xiu-Mei SHAO^1,2、*, Xue LI^1,2、**, Yi GU^1,2, Ying-Jie MA^1,2, and Tao LI^1,2

¹State Key Laboratories of Transducer Technology，Shanghai Institute of Technical Physics，Chinese Academy of Sciences，Shanghai 200083，China

²Key Laboratory of Infrared Imaging Materials and Detectors，Shanghai Institute of Technical Physics，Chinese Academy of Sciences，Shanghai 200083，China

³University of Chinese Academy of Sciences，Beijing 100049，China

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References(13)

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[9] Wan L H, Cao G Q, Shao X M et al. High performance In0.83Ga0.17As SWIR photodiode passivated by Al2O3/SiNx stacks with low-stress SiNx films[J]. J. Appl. Phys, 126, 033101(2019).

[10] Wan L H, Shao X M, Ma Y J et al. Dark current and 1/f noise characteristics of In0.74Ga0.26As photodiode passivated by SiNx/Al2O3 bilayer[J]. Infrared Physics and Technol, 109, 103389(2020).

[11] Zhang Y G, Gu Y, Zhu C et al. Gas source MBE grown wavelength extended 2.2 and 2.5 μm InGaAs PIN photodetectors[J]. Infrared Phys. Technol, 47, 257-262(2006).

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Lu-Hong WAN, Xiu-Mei SHAO, Xue LI, Yi GU, Ying-Jie MA, Tao LI. Interfacial properties between Al₂O₃and In_0.74Al_0.26As epitaxial layer on MIS capacitors[J]. Journal of Infrared and Millimeter Waves, 2022, 41(2): 384

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Paper Information

Category: Research Articles

Received: Apr. 10, 2021

Accepted: --

Published Online: Jul. 8, 2022

The Author Email: Xiu-Mei SHAO (shaoxm@mail.sitp.ac.cn), Xue LI (lixue@mail.sitp.ac.cn)

DOI:10.11972/j.issn.1001-9014.2022.02.002

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology