Fig. 1. （a）Sectional schematic diagram and（b）photography of MIS capacitor

Fig. 2. The cross-sectional images（top）obtained by TEM and cross-sectional composition information（bottom）obtained by EDS of（a）ICPCVD-SiN_x on In_0.74Al_0.26As and（b）ALD-Al₂O₃ on In_0.74Al_0.26As

Fig. 3. The 3d_5/2 core level of In recorded from bare In_0.74Al_0.26As wafer，ICPCVD-SiN_x/In_0.74Al_0.26As and ALD-Al₂O₃/In_0.74Al_0.26As（a）on the surface of bare In_0.74Al_0.26As，（b）in the bulk of In_0.74Al_0.26As，（c）on the surface of ICPCVD-SiN_x，（d）in the bulk of ICPCVD-SiN_x，（e）at the interface between ICPCVD-SiN_x and In_0.74Al_0.26As，（f）on the surface of ALD-Al₂O₃，（g）in the bulk of ALD-Al₂O₃，and（h）at the interface between ALD-Al₂O₃ and In_0.74Al_0.26As

Fig. 4. C-V curves of MIS capacitors measured at 210 K for different frequencies from 1 kHz to 1 MHz（a）SiN_x/In_0.74Al_0.26As MIS capacitor，（b）SiN_x/Al₂O₃ In_0.74Al_0.26As MIS capacitor