Photonics Research, Volume. 12, Issue 8, 1776(2024)

Non-destructive electroluminescence inspection for LED epitaxial wafers based on soft single-contact operation

Hao Su1, Jiawen Qiu1, Junlong Li1, Rong Chen2, Jianbi Le2, Xiaoyang Lei3, Yongai Zhang1,2,4, Xiongtu Zhou1,2,5, Tailiang Guo1,2, and Chaoxing Wu1,2、*
Author Affiliations
  • 1School of Physics and Information Engineering, Fuzhou University, Fuzhou 350000, China
  • 2Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
  • 3Fujian Inspection and Research Institute for Product Quality, Fuzhou 350002, China
  • 4e-mail: yongaizhang@fzu.edu.cn
  • 5e-mail: xtzhou@fzu.edu.cn
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    References(37)

    [1] F. Jiang, F. Xu, Z. Liu. Development of GaN-based micro-LED display technology. J. Synth. Cryst., 49, 2013-2023(2020).

    [25] Y. Pang. Study on influencing factors of wavelength of 4-inch LED epitaxial wafer(2021).

    [35] H. T. Kim, J. Kim, S. T. Kim. A dual side electroluminescence measurement system for LED wafer manufacturing. IEEE International Symposium on Assembly and Manufacturing (ISAM), 1-5(2011).

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    Hao Su, Jiawen Qiu, Junlong Li, Rong Chen, Jianbi Le, Xiaoyang Lei, Yongai Zhang, Xiongtu Zhou, Tailiang Guo, Chaoxing Wu, "Non-destructive electroluminescence inspection for LED epitaxial wafers based on soft single-contact operation," Photonics Res. 12, 1776 (2024)

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    Paper Information

    Category: Instrumentation and Measurements

    Received: Mar. 6, 2024

    Accepted: May. 30, 2024

    Published Online: Aug. 2, 2024

    The Author Email: Chaoxing Wu (chaoxing_wu@fzu.edu.cn)

    DOI:10.1364/PRJ.522697

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