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Chinese Optics Letters, Volume. 13, Issue 12, 123101(2015)

Using lead germanium telluride as a high-index coating material in the mid-wavelength infrared narrow bandpass filters

Ping Xie1, Bin Li1、*, Suying Zhang1, and Dingquan Liu1,2
Author Affiliations
  • 1Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • 2School of Physical Science and Technology, Shanghai Tech University, Shanghai 200031, China
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    Measured spectral transmittance curves of thin films; a spectrum of the silicon substrate is also presented in order to make a comparison.

    Fig. 1. Measured spectral transmittance curves of thin films; a spectrum of the silicon substrate is also presented in order to make a comparison.

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    Optical constants of thin films evaporated from the starting materials with a Ge concentration x of 0.18.

    Fig. 2. Optical constants of thin films evaporated from the starting materials with a Ge concentration x of 0.18.

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    Summary of measured spectral transmittance curves for the sapphire wafer, silicon wafer, Ge wafer, Pb1−xGexTe thin films, and PbTe thin films, respectively.

    Fig. 3. Summary of measured spectral transmittance curves for the sapphire wafer, silicon wafer, Ge wafer, Pb1−xGexTe thin films, and PbTe thin films, respectively.

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    Transmission spectrum of the narrowband filter fabricated using Pb1−xGexTe as a high-index material (black), compared with that using Ge as a high-index material (red).

    Fig. 4. Transmission spectrum of the narrowband filter fabricated using Pb1−xGexTe as a high-index material (black), compared with that using Ge as a high-index material (red).

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    Standard adhesion tests are performed on the filters using Pb1−xGexTe as a high-index layer material.

    Fig. 5. Standard adhesion tests are performed on the filters using Pb1−xGexTe as a high-index layer material.

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    • Table 1. Summary for Element Concentrations in Thin Films

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      Table 1. Summary for Element Concentrations in Thin Films

       Elements Concentration (%)Ge Concentration in Films (y)Te concentration in films (z)
      Ge Concentration in Evaporants (x)GePbTe
      0.081.0048.2450.770.020.52
      0.101.9246.8851.200.040.51
      0.122.4547.1150.440.050.50
      0.143.0246.9350.050.060.50
      0.164.0746.6049.330.080.49
      0.185.1146.9347.950.100.48
      0.256.9846.5846.430.130.46
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    Ping Xie, Bin Li, Suying Zhang, Dingquan Liu, "Using lead germanium telluride as a high-index coating material in the mid-wavelength infrared narrow bandpass filters," Chin. Opt. Lett. 13, 123101 (2015)

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    Paper Information

    Category: Thin films

    Received: Jul. 20, 2015

    Accepted: Oct. 27, 2015

    Published Online: Sep. 12, 2018

    The Author Email: Bin Li (binli@mail.sitp.ac.cn)

    DOI:10.3788/COL201513.123101

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology