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Chinese Journal of Lasers, Volume. 51, Issue 8, 0803001(2024)

Optimal Design of SACM Ge/Si APD Based on Poly-Si Bonding Layer

Juan Zhang, Xiaoping Su, Jiahui Li, Zhanren Wang, and Shaoying Ke*
Author Affiliations
  • Key Laboratory of Light Field Manipulation and System Integration Applications in Fujian Province, College of Physics and Information Engineering, Minnan Normal University, Zhangzhou 363000, Fujian , China
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    AbstractGet PDF(in Chinese)
    Figures&Tables (13)
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    References (41)
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    Figures & Tables(13)
    Device structure of Ge/Si APD

    Fig. 1. Device structure of Ge/Si APD

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    Currents at different wavelengths when T=300 K and P=-20 dBm

    Fig. 2. Currents at different wavelengths when T=300 K and P=-20 dBm

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    Influence of doping concentration on Ge/Si APD when λ=1310 nm, T=300 K, and P=-20 dBm

    Fig. 3. Influence of doping concentration on Ge/Si APD when λ=1310 nm, T=300 K, and P=-20 dBm

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    Recombination rate versus doping concentration with recombination rate in bond layer shown in inset when λ=1310 nm,T=300 K, P=-20 dBm, and V=0.95Vbr. (a) Ge-APD; (b) Si-APD

    Fig. 4. Recombination rate versus doping concentration with recombination rate in bond layer shown in inset when λ=1310 nm,T=300 K, P=-20 dBm, and V=0.95Vbr. (a) Ge-APD; (b) Si-APD

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    Carrier concentration versus doping concentration when λ=1310 nm, T=300 K, P=-20 dBm, and V=0.95Vbr

    Fig. 5. Carrier concentration versus doping concentration when λ=1310 nm, T=300 K, P=-20 dBm, and V=0.95Vbr

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    APD energy band versus doping concentration when λ=1310 nm, T=300 K, P=-20 dBm, and V=0.95Vbr

    Fig. 6. APD energy band versus doping concentration when λ=1310 nm, T=300 K, P=-20 dBm, and V=0.95Vbr

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    Charge concentration versus doping concentration when λ=1310 nm, T=300 K, P=-20 dBm, and V=0.95Vbr. (a) Ge-APD; (b) Si-APD

    Fig. 7. Charge concentration versus doping concentration when λ=1310 nm, T=300 K, P=-20 dBm, and V=0.95Vbr. (a) Ge-APD; (b) Si-APD

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    Effect of doping concentration on performance of Ge/Si APD when λ=1310 nm, T=300 K, P=-20 dBm, and V=0.95Vbr. (a) Impact ionization rate versus doping concentration of Ge layer; (b) impact ionization rate versus doping concentration of Si layer; (c) electron ionization coefficient versus doping concentration of Ge layer; (d) hole ionization coefficient versus doping concentration of Ge layer; (e) electron ionization coefficient versus doping concentration of Si layer; (f) hole ionization coefficient versus doping concentration of Si layer

    Fig. 8. Effect of doping concentration on performance of Ge/Si APD when λ=1310 nm, T=300 K, P=-20 dBm, and V=0.95Vbr. (a) Impact ionization rate versus doping concentration of Ge layer; (b) impact ionization rate versus doping concentration of Si layer; (c) electron ionization coefficient versus doping concentration of Ge layer; (d) hole ionization coefficient versus doping concentration of Ge layer; (e) electron ionization coefficient versus doping concentration of Si layer; (f) hole ionization coefficient versus doping concentration of Si layer

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    Electrical field intensity versus doping concentration when λ=1310 nm, T=300 K, P=-20 dBm, and V=0.95Vbr. (a) Ge-APD; (b) Si-APD

    Fig. 9. Electrical field intensity versus doping concentration when λ=1310 nm, T=300 K, P=-20 dBm, and V=0.95Vbr. (a) Ge-APD; (b) Si-APD

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    Gain changes with doping concentration. (a)(b) λ=1310 nm, T=300 K, and P=-20 dBm; (c)(d) λ=1310 nm, T=300 K, P=-20 dBm, and V=0.95Vbr

    Fig. 10. Gain changes with doping concentration. (a)(b) λ=1310 nm, T=300 K, and P=-20 dBm; (c)(d) λ=1310 nm, T=300 K, P=-20 dBm, and V=0.95Vbr

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    3 dB bandwidth and gain bandwidth product versus doping concentration when λ=1310 nm, T=300 K, and P=-20 dBm

    Fig. 11. 3 dB bandwidth and gain bandwidth product versus doping concentration when λ=1310 nm, T=300 K, and P=-20 dBm

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    Carrier velocity versus doping concentration when λ=1310 nm, T=300 K, P=-20 dBm, and V=0.95Vbr

    Fig. 12. Carrier velocity versus doping concentration when λ=1310 nm, T=300 K, P=-20 dBm, and V=0.95Vbr

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    • Table 1. Material parameters of Ge/Si APD

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      Table 1. Material parameters of Ge/Si APD

      ParameterGeSipoly-Si
      Thickness /µm0.8000.5000.002
      Band gap at 300 K /eV0.661.121.15
      Electron affinity /eV444
      Permittivity16.011.811.9
      Doping typenni
      Electron saturation speed /（cm·s-1）1×1071.3×107—
      Hole saturation speed /（cm·s-1）9×1061×107—
      Electron mobility /［cm2·（V·s）-1］39001450500
      Hole mobility /［cm2·（V·s）-1］1900500160
      Electron lifetime /s——1×10-8
      Hole lifetime /s——1×10-8
      NTA /eV——1×1016
      NTD /eV——1×1016
      WTA /J——0.01
      WTD /J——0.01
      NGA /eV——1×1010
      NGD /eV——1×1010
      WGA /J——0.27
      WGD /J——0.27
      EGA /J——0.70
      EGD /J——1.22
      SIGTAE——1×10-17
      SIGTAH——1×10-15
      SIGTDE——1×10-15
      SIGTDH——1×10-17
      SIGGAE——1×10-15
      SIGGAH——1×10-14
      SIGGDE——1×10-14
      SIGGDH——1×10-15
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    Juan Zhang, Xiaoping Su, Jiahui Li, Zhanren Wang, Shaoying Ke. Optimal Design of SACM Ge/Si APD Based on Poly-Si Bonding Layer[J]. Chinese Journal of Lasers, 2024, 51(8): 0803001

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    Paper Information

    Category: Materials

    Received: Jul. 21, 2023

    Accepted: Sep. 20, 2023

    Published Online: Mar. 29, 2024

    The Author Email: Ke Shaoying (syke@mnnu.edu.cn)

    DOI:10.3788/CJL231048

    CSTR:32183.14.CJL231048

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology