[1] [1] ZHANG B, ZHENG T, WANG Q X, et al. Contact resistance and stability study for Au, Ti, Hf and Ni contacts on thin-film Mg2Si［J］. Journal of Alloys and Compounds, 2017, 699: 1134-1139.

[2] [2] INOUE R, NAKANO J, NAKAMURA T, et al. Mechanical and thermoelectric properties of intragranular SiC-nanoparticle/Mg2Si composites［J］. Journal of Alloys and Compounds, 2019, 775: 657-666.

[3] [3] SARPI B, ZIRMI R, PUTERO M, et al. Growth, stability and decomposition of Mg2Si ultra-thin films on Si(100)［J］. Applied Surface Science, 2018, 427: 522-527.

[4] [4] KAUR K, KUMAR R. Electronic and thermoelectric properties of Al doped Mg2Si material: DFT study［J］. Materials Today: Proceedings, 2016, 3(6): 1785-1791.

[5] [5] ZHANG Y, CHU Y C, XING W, et al. Mechanical properties of thermoelectric Mg2Si using molecular dynamics simulations［J］. Mechanics of Advanced Materials and Structures, 2019, 26(8): 710-715.

[6] [6] LIAO Y F, FAN M H, XIE Q, et al. Defect-induced room-temperature visible light luminescence in Mg2Si∶Al films［J］. Applied Surface Science, 2018, 458: 360-368.

[7] [7] TOKAIRIN T, IKEDA J, UDONO H. Crystal growth of Mg2Si for IR-detector［J］. Journal of Crystal Growth, 2017, 468: 761-765.

[8] [8] GOURALNIK A S, MASLOV A M, USTINOV A Y, et al. Formation of Mg2Si at high temperatures by fast deposition of Mg on Si(111) with wedge-shaped temperature distribution［J］. Applied Surface Science, 2018, 439: 282-284.

[9] [9] LIAO Y F, XIE Q, XIAO Q Q, et al. Photoluminescence of Mg2Si films fabricated by magnetron sputtering［J］. Applied Surface Science, 2017, 403: 302-307.

[10] [10] KATAGIRI A, OGAWA S, UEHARA M, et al. Growth of (111)-oriented epitaxial magnesium silicide (Mg2Si) films on (001) Al2O3 substrates by RF magnetron sputtering and their properties［J］. Journal of Materials Science, 2018, 53(7): 5151-5158.

[11] [11] KATAGIRI A, OGAWA S, OIKAWA T, et al. Structural characterization of epitaxial Mg2Si films grown on MgO and MgO-buffered Al2O3substrates［J］. Japanese Journal of Applied Physics, 2015, 54(7S2): 07 JC01.

[12] [12] KUROKAWA M, UEHARA M, ICHINOSE D, et al. Preparation of preferentially (111)-oriented Mg2Si thin films on (001)Al2O3 and (100)CaF2 substrates and their thermoelectric properties［J］. Japanese Journal of Applied Physics, 2017, 56(5S1): 05DC02.

[13] [13] CHAN K Y, TEO B S. Sputtering power and deposition pressure effects on the electrical and structural properties of copper thin films［J］. Journal of Materials Science, 2005, 40(22): 5971-5981.

[14] [14] LI Y P, XIN Q, DU L L, et al. Extremely sensitive dependence of SnOx min film properties on sputtering power［J］. Scientific Reports, 2016, 6: 36183.

[15] [15] LANGFORD J I, WILSON A J C. Scherrer after sixty years: a survey and some new results in the determination of crystallite size［J］. Journal of Applied Crystallography, 1978, 11(2): 102-113.

[16] [16] GAO P T, MENG L J, DOS SANTOS M P, et al. Influence of sputtering power and the substrate-target distance on the properties of ZrO2 films prepared by RF reactive sputtering［J］. Thin Solid Films, 2000, 377/378: 557-561.

[18] [18] BALEVA M, ZLATEVA G, ATANASSOV A, et al. Resonant Raman scattering in ion-beam-synthesized Mg2Si in a silicon matrix［J］. Physical Review B, 2005, 72(11): 115330.

[19] [19] TELLIER C R. A theoretical description of grain boundary electron scattering by an effective mean free path［J］. Thin Solid Films, 1978, 51(3): 311-317.

[20] [20] RAFEA M A, FARAG A A M, ROUSHDY N. Controlling the crystallite size and influence of the film thickness on the optical and electrical characteristics of nanocrystalline Cu2S films［J］. Materials Research Bulletin, 2012, 47(2): 257-266.