MoS2 films were prepared on quartz substrate by radio frequency (RF) magnetron sputtering. The effect of sputtering time, sputtering temperature, argon flow rate and sputtering power on the structure of MoS2 films was studied by orthogonal test method. The crystallinity, thickness and surface morphology of MoS2 films were analyzed by XRD, Raman, XPS, EDS and SEM, the optimal process parameters for preparing MoS2 films were obtained. It is found that the crystallinity of the sample is poor at higher or lower sputtering temperature, and the XRD diffraction peak of the sample is not obvious at lower sputtering temperature. When the temperature is 250 ℃, the sample has more XRD diffraction peaks and better crystallinity. According to the orthogonal test, sputtering temperature plays a crucial role in the crystallization of MoS2, followed by argon flow rate. When sputtering temperature is 250 ℃, argon flow rate is 6 mL/min, sputtering time is 30 min, and sputtering power is 300 W or 400 W, the crystallinity of MoS2 film is better. The film prepared under this condition is thicker, but it points out the direction for future experiments. In the following experiments, sputtering temperature, sputtering power and argon flow rate can be kept unchanged. By shortening the time, films with a thickness of 58.9 nm have been successfully prepared.