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Journal of Optoelectronics · Laser, Volume. 33, Issue 11, 1121(2022)

Biaxially tensile-strained Ge/SiGe multiple quantum wells electro-absorption modulator based on ultraviolet lithography

HUANG Qiang1,2, GAO Jianfeng1, HUANG Chukun1, JIANG Peilin1, SUN Junqiang1、*, and YU Changliang3
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  • 1[in Chinese]
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  • 3[in Chinese]
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    HUANG Qiang, GAO Jianfeng, HUANG Chukun, JIANG Peilin, SUN Junqiang, YU Changliang. Biaxially tensile-strained Ge/SiGe multiple quantum wells electro-absorption modulator based on ultraviolet lithography[J]. Journal of Optoelectronics · Laser, 2022, 33(11): 1121

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    Paper Information

    Received: May. 30, 2022

    Accepted: --

    Published Online: Oct. 9, 2024

    The Author Email: SUN Junqiang (jqsun@hust.edu.cn)

    DOI:10.16136/j.joel.2022.11.0410

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology