A low polarization-dependent Ge/SiGe multiple quantum wells electro-absorption modulator by introducing biaxial tensile strain through suspended microbridge structure is fabricated on complementary-metal-oxide-semiconductor (CMOS) compatible silicon platform using ultraviolet lithography technique (UVL).The biaxial tensile strain of the fabricated device is measured through Raman spectroscopy,and the photocurrent response,modulation extinction ratio and high frequency response of the device are tested under both of transverse electric (TE) and transverse magnetic (TM) polarization.The device presents a low polarization-dependent extinction ratio of 5.8 dB under 0 V/4 V operation,together with a 3 dB modulation bandwidth of 8.3 GHz at 4 V reverse bias voltages.Compared with electron beam lithography technique (EBL),although the device fabricated through UVL performs a little worse in modulation extinction ratio and high frequency response bandwidth,it has the advantages of short exposure time,low cost and enabling mass production,which has broad application prospects.