Acta Optica Sinica, Volume. 42, Issue 20, 2016001(2022)

Analysis of Inverted GaInP/GaAs/InGaAs Triple-Junction Solar Cell Failure

Yi Zhang1, Junhua Long2、*, Qiangjian Sun1, Jingjing Xuan1, Xuefei Li2, Xia Wang1, Zhitao Chen2, Xiaoxu Wu1, and Shulong Lu2、**
Author Affiliations
  • 1School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, Anhui , China
  • 2Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, Jiangsu , China
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    Figures & Tables(6)
    GaInP/GaAs/InGaAs triple junction solar cell. (a) Structure schematic diagram; (b) process flow diagram
    J-V curves of GaInP/GaAs/InGaAs triple junction solar cells under AM1.5G spectrum before and after damp heat test
    Reflectivity curves of Ti3O5/SiO2 double-layer ARC of triple junction solar cells before and after damp heat test
    EL emission spectra under different injection current densities before and after damp heat test (inset is change of EL emission peak intensity before and after damp heat test)
    EQE curves of GaInP/GaAs/InGaAs triple junction solar cells before and after damp heat test
    Concents of Al, Ga, In, P, As, and O before and after damp heat experiment vis SIMS test
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    Yi Zhang, Junhua Long, Qiangjian Sun, Jingjing Xuan, Xuefei Li, Xia Wang, Zhitao Chen, Xiaoxu Wu, Shulong Lu. Analysis of Inverted GaInP/GaAs/InGaAs Triple-Junction Solar Cell Failure[J]. Acta Optica Sinica, 2022, 42(20): 2016001

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    Paper Information

    Category: Materials

    Received: Mar. 28, 2022

    Accepted: Apr. 27, 2022

    Published Online: Oct. 18, 2022

    The Author Email: Long Junhua (jhlong2017@sinano.ac.cn), Lu Shulong (sllu2008@sinano.ac.cn)

    DOI:10.3788/AOS202242.2016001

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