Semiconductor Optoelectronics, Volume. 45, Issue 1, 117(2024)

High-reliability Bonding Process of Infrared Detector Chip

LI Junguang1,2,3, WANG Xiao2,3, QIAO Jun2,3, and LI Peng2,3
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    References(3)

    [12] [12] Lu Lei. The process introduction and quality inspection of wire bonding[J]. Equipment for Electronic Products Marufacturing, 2008, 158(3): 53-59.

    [13] [13] Insu J, Qwanho C, Joonki H, et al. The effect of ultrasonic power on bonding pad and IMD layers in ultrasonic wire bonding[C]// Advances in Electronic Materials and Packaging, 2001: 235-242.

    [15] [15] Zhang D, Ling S F. Monitoring wire bonding via time-frequency analysis of horn vibration[J]. IEEE Trans. Electron. Package Manuf., 2003, 26: 216-220.

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    LI Junguang, WANG Xiao, QIAO Jun, LI Peng. High-reliability Bonding Process of Infrared Detector Chip[J]. Semiconductor Optoelectronics, 2024, 45(1): 117

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    Paper Information

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    Received: Sep. 22, 2023

    Accepted: --

    Published Online: Jun. 25, 2024

    The Author Email:

    DOI:10.16818/j.issn1001-5868.2023092202

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