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Chinese Optics Letters, Volume. 13, Issue Suppl., S23101(2015)

Mechanism of the smart cut of LiTaO3 by hydrogen ion implantation

Changdong Ma, Fei Lu*, and Bo Xu
Author Affiliations
  • School of Information Science and Engineering, Shandong University, Jinan 250100, China
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    Vacancies and hydrogen concentration for 6×1016 cm−2 H ions-implanted sample simulated by SRIM.

    Fig. 1. Vacancies and hydrogen concentration for 6×1016  cm−2 H ions-implanted sample simulated by SRIM.

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    Cross section TEM images of the as-implanted sample (7×1016 H+/cm2) (left); high magnification cross-sectional TEM image of dense damage region (right).

    Fig. 2. Cross section TEM images of the as-implanted sample (7×1016  H+/cm2) (left); high magnification cross-sectional TEM image of dense damage region (right).

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    Raman spectra of virgin, as-implanted, and annealed samples.

    Fig. 3. Raman spectra of virgin, as-implanted, and annealed samples.

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    IR absorption spectra of the samples.

    Fig. 4. IR absorption spectra of the samples.

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    • Table 1. Surface Blistering on Dependency of Experimental Parameters

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      Table 1. Surface Blistering on Dependency of Experimental Parameters

      Dose (×1016  cm−2)AnnealingSurface blistering
      4500°C, 30 minNo
      5500°C, 30 minNo
      6250°C, 30 minYes
      7250°C, 10 minYes
      8200°C, 30 minYes
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    Changdong Ma, Fei Lu, Bo Xu, "Mechanism of the smart cut of LiTaO3 by hydrogen ion implantation," Chin. Opt. Lett. 13, S23101 (2015)

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    Paper Information

    Category: Thin films

    Received: Jan. 15, 2015

    Accepted: Mar. 10, 2015

    Published Online: Aug. 8, 2018

    The Author Email: Fei Lu (feilu@sdu.edu.cn)

    DOI:10.3788/COL201513.S23101

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology