Researching | Wavelength‑Tunable Silicon Nitride External‐Cavity Diode Laser

Chinese Journal of Lasers, Volume. 51, Issue 13, 1301009(2024)

Wavelength‑Tunable Silicon Nitride External‐Cavity Diode Laser

Yiming Chen, Qingyu Cong, Lianxi Jia, Yang Qiu, Xingyan Zhao, Shaonan Zheng, Yuan Dong, Qize Zhong, and Ting Hu^*

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School of Microelectronics, Shanghai University, Shanghai 201800, China

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References (27)

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References(27)

[1] Yu H J, Patel D, Liu W et al. 800 gbps fully integrated silicon photonics transmitter for data center applications[C](2022).

[2] Margalit N, Xiang C, Bowers S M et al. Perspective on the future of silicon photonics and electronics[J]. Applied Physics Letters, 118, 220501(2021).

[3] Niffenegger R J, Stuart J, Sorace-Agaskar C et al. Integrated multi-wavelength control of an ion qubit[J]. Nature, 586, 538-542(2020).

[4] Avesani M, Calderaro L, Schiavon M et al. Full daylight quantum-key-distribution at 1550 nm enabled by integrated silicon photonics[J]. NPJ Quantum Information, 7, 93(2021).

[5] Hsu C P, Li B D, Solano-Rivas B et al. A review and perspective on optical phased array for automotive LiDAR[J]. IEEE Journal of Selected Topics in Quantum Electronics, 27, 8300416(2021).

[6] Soref R A, De Leonardis F, Passaro V M N. On-chip detection of trace gases using photonic matched filters[J]. Journal of Lightwave Technology, 37, 1388-1395(2019).

[7] Wang J W, Sanchez M M, Yin Y et al. Silicon-based integrated label-free optofluidic biosensors: latest advances and roadmap[J]. Advanced Materials Technologies, 5, 1901138(2020).

[8] Zhao J S, Xia Y M, Li Q L et al. Research progress in low-cost tunable semiconductor lasers[J]. Acta Optica Sinica, 42, 1714003(2022).

[9] Fang A W, Park H, Cohen O et al. Electrically pumped hybrid AlGaInAs-silicon evanescent laser[J]. Optics Express, 14, 9203-9210(2006).

[10] Morton P A, Xiang C, Khurgin J B et al. Integrated coherent tunable laser (ICTL) with ultra-wideband wavelength tuning and sub-100 Hz lorentzian linewidth[J]. Journal of Lightwave Technology, 40, 1802-1809(2022).

[11] Liang H, Wei F, Sun Y G et al. A 1310 nm band narrow linewidth hybrid integrated external cavity semiconductor laser based on fiber Bragg gratings[J]. Chinese Journal of Lasers, 48, 2001002(2021).

[12] Han Y, Zhang X, Huang F J et al. Electrically pumped widely tunable O-band hybrid lithium niobite/III-V laser[J]. Optics Letters, 46, 5413-5416(2021).

[13] Guo Y Y, Li X H, Jin M H et al. Hybrid integrated external cavity laser with a 172-nm tuning range[J]. APL Photonics, 7, 066101(2022).

[14] Han Y, Lau K M. III–V lasers selectively grown on (001) silicon[J]. Journal of Applied Physics, 128, 200901(2020).

[15] Roeloffzen C G H, Hoekman M, Klein E J et al. Low-loss Si3N4 TriPleX optical waveguides: technology and applications overview[J]. IEEE Journal of Selected Topics in Quantum Electronics, 24, 4400321(2018).

[16] Moss D J, Morandotti R, Gaeta A L et al. New CMOS-compatible platforms based on silicon nitride and Hydex for nonlinear optics[J]. Nature Photonics, 7, 597-607(2013).

[17] Fan Y W, Epping J P, Oldenbeaving R M et al. Optically integrated InP-Si3N4 hybrid laser[C], 122-123(2016).

[18] Fan Y W, van Rees A, van der Slot P J M et al. Hybrid integrated InP-Si3N4 diode laser with a 40-Hz intrinsic linewidth[J]. Optics Express, 28, 21713-21728(2020).

[19] Tsong W, van den Vlekkert I, Musa S M et al. 139 nm tuning range, high speed wavelength modulation, and high output power up to 60 mW from a single gain, two-ring vernier external cavity laser[J]. Proceedings of SPIE, 12424, 124240G(2023).

[20] Coldren L A, Corzine S W, Mašanović M L[M]. Diode lasers and photonic integrated circuits(2012).

[21] Henry C. Theory of the linewidth of semiconductor lasers[J]. IEEE Journal of Quantum Electronics, 18, 259-264(1982).

[22] Liang L J. The research of wavelength tunable laser based on novel structure and its applications[D], 58-72(2018).

[23] Tromborg B, Olesen H, Pan X et al. Transmission line description of optical feedback and injection locking for Fabry-Perot and DFB lasers[J]. IEEE Journal of Quantum Electronics, 23, 1875-1889(1987).

[24] Tran M A, Huang D N, Bowers J E. Tutorial on narrow linewidth tunable semiconductor lasers using Si/III-V heterogeneous integration[J]. APL Photonics, 4, 111101(2019).

[25] Tanaka S, Jeong S H, Sekiguchi S et al. High-output-power, single-wavelength silicon hybrid laser using precise flip-chip bonding technology[J]. Optics Express, 20, 28057-28069(2012).

[26] Wang C, Li X, Jin H et al. Silicon reflectors for external cavity lasers based on ring resonators[J]. Optics Communications, 383, 453-459(2017).

[27] van Rees A, Fan Y W, Geskus D et al. Ring resonator enhanced mode-hop-free wavelength tuning of an integrated extended-cavity laser[J]. Optics Express, 28, 5669-5683(2020).

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Yiming Chen, Qingyu Cong, Lianxi Jia, Yang Qiu, Xingyan Zhao, Shaonan Zheng, Yuan Dong, Qize Zhong, Ting Hu. Wavelength‑Tunable Silicon Nitride External‐Cavity Diode Laser[J]. Chinese Journal of Lasers, 2024, 51(13): 1301009

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Paper Information

Category: laser devices and laser physics

Received: Jan. 2, 2024

Accepted: Feb. 5, 2024

Published Online: Jul. 2, 2024

The Author Email: Ting Hu (hu-t@shu.edu.cn)

DOI:10.3788/CJL240429

CSTR:32183.14.CJL240429

Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology