Chinese Journal of Lasers, Volume. 51, Issue 13, 1301009(2024)

Wavelength‑Tunable Silicon Nitride External‐Cavity Diode Laser

Yiming Chen, Qingyu Cong, Lianxi Jia, Yang Qiu, Xingyan Zhao, Shaonan Zheng, Yuan Dong, Qize Zhong, and Ting Hu*
Author Affiliations
  • School of Microelectronics, Shanghai University, Shanghai 201800, China
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    Figures & Tables(9)
    Structural diagram of external-cavity diode laser
    External mirror. (a) Structural diagram; (b) optical micrograph
    Operation principle of mirror. (a) k2 value of DC and mirror reflectivity versus wavelength with equivalent mirror structure shown in inset; (b) mirror reflectivity versus phase shift in MZI arm under different k2
    Simulation results of vernier filter. (a) Side-mode suppression ratio versus wavelength tuning range; (b) normalized transmission spectra of MRR1, MRR2, and d-MZI; (c) normalized transmission spectrum of external-cavity mirror without d-MZI; (d) normalized transmission spectrum of external-cavity mirror
    Schematic of external-cavity diode laser measurement system
    Gain spectrum of RSOA with driving current of 120 mA
    Basic characteristics of laser. (a) L-I curve of external-cavity diode laser; (b) laser output spectrum
    Performance test results of laser. (a) Laser output power versus VTC; (b) laser operating wavelength versus VPS; (c) superimposed
    Laser output spectra under different VTC when VMRR1=6 V. (a) VTC=0 V; (b) VTC=30 V
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    Yiming Chen, Qingyu Cong, Lianxi Jia, Yang Qiu, Xingyan Zhao, Shaonan Zheng, Yuan Dong, Qize Zhong, Ting Hu. Wavelength‑Tunable Silicon Nitride External‐Cavity Diode Laser[J]. Chinese Journal of Lasers, 2024, 51(13): 1301009

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    Paper Information

    Category: laser devices and laser physics

    Received: Jan. 2, 2024

    Accepted: Feb. 5, 2024

    Published Online: Jul. 2, 2024

    The Author Email: Ting Hu (hu-t@shu.edu.cn)

    DOI:10.3788/CJL240429

    CSTR:32183.14.CJL240429

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