Chinese Journal of Lasers, Volume. 33, Issue 6, 827(2006)

Influences of Deposition Temperature on Residual Stress of HfO2 Films Prepared by Electron Beam Evaporation

[in Chinese]1,2、*, [in Chinese]1, [in Chinese]1, and [in Chinese]1
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    CLP Journals

    [1] Xiao Qiling, Shao Shuying, Shao Jianda, Fan Zhengxiu. Influences of Oxygen Partial Pressure and Deposition Rate on Residual Stress of YSZ Thin Films[J]. Chinese Journal of Lasers, 2009, 36(5): 1195

    [2] SUN Qing-yu, SUN Zhe-yu, XING Wen-chao, SUN De-gui. Preparation Process and Stress Study of Ge-doped Silica Film Waveguide[J]. Acta Photonica Sinica, 2018, 47(12): 1231003

    [3] [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Effects of Substrate Materials and Deposition Parameters on Film Stress[J]. Acta Optica Sinica, 2010, 30(2): 602

    [4] Yanming Shen, Zhaoxia Han, Jianda Shao, Shuying Shao, Hongbo He, "Annealing effects on residual stress of HfO2/SiO2 multilayers," Chin. Opt. Lett. 6, 03225 (2008)

    [5] Wang Shancheng, Fang Ming, Yi Kui, Shao Shuying, Fan Zhengxiu. Rate control in Electron-Beam Evaporated Optical Coatings[J]. Chinese Journal of Lasers, 2008, 35(10): 1591

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Influences of Deposition Temperature on Residual Stress of HfO2 Films Prepared by Electron Beam Evaporation[J]. Chinese Journal of Lasers, 2006, 33(6): 827

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    Paper Information

    Category: materials and thin films

    Received: Dec. 6, 2005

    Accepted: --

    Published Online: Jun. 13, 2006

    The Author Email: (shenyanming@mail.siom.ac.cn)

    DOI:

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