[1] Wang Y G, Ma X Y, Zhang Z G. Development about the research of semiconductor saturable absorption mirror[J]. Chinese Journal of Lasers, 31, 137-139(2004).

[2] Lin N, Zhong L, Li H M et al. Strain-compensated multiquantum well structure semiconductor saturable absorber mirror[J]. Chinese Journal of Lasers, 49, 1101002(2022).

[3] Finke T, Nürnberg J, Sichkovskyi V et al. Temperature resistant fast InxGa1-xAs/GaAs quantum dot saturable absorber for the epitaxial integration into semiconductor surface emitting lasers[J]. Optics Express, 28, 20954-20966(2020).

[4] Cong Z H, Tang D Y, Tan W D et al. The Nd∶CaYAlO4 passively mode locked laser with a SESAM[C](2011).

[5] Oudar J L, Aubin G, Mangeney J et al. Ultra-fast quantum-well saturable absorber devices and their application to all-optical regeneration of telecommunication optical signals[J]. Annales Des Télécommunications, 58, 1667-1707(2003).

[6] Xue Y H, Wang Q Y, Zhang Z G et al. Passive mode locking of an Yb∶YAB laser with a low modulation depth SESAM[J]. Chinese Optics Letters, 2, 466-467(2004).

[7] Schättiger F, Bauer D, Demsar J et al. Characterization of InGaAs and InGaAsN semiconductor saturable absorber mirrors for high-power mode-locked thin-disk lasers[J]. Applied Physics B, 106, 605-612(2012).

[8] Saraceno C J, Schriber C, Mangold M et al. SESAMs for high power oscillators: damage thresholds and design guidelines[C], CFO1(2011).

[9] Kim M J, Kim H S, Kim N S et al. Investigation of InGaAs quantum-well parameters of a semiconductor saturable absorber mirror used for mode locking of a Yb-doped fiber laser[J]. Journal of the Korean Physical Society, 63, 1919-1924(2013).

[10] Zhang G J. LD pumped Nd∶YVO4 two-dimensional new material Q-switched mode-locked laser[D](2015).

[11] Wang Y B, Wang S, Feng G Y et al. SESAM combined Kerr lens mode locked Yb∶CALGO laser pumped by a 1.2 W single mode fiber coupled laser diode[J]. Laser Physics Letters, 14, 055003(2017).

[12] Liu F Q, Zhang B T, Sun X L et al. Study on Yb∶KYW femtosecond laser based on SESAM[J]. Physics Experimentation, 40, 16-21(2020).

[13] Keller U, Knox W H, 'tHooft G W. Ultrafast solid-state mode-locked lasers using resonant nonlinearities[J]. IEEE Journal of Quantum Electronics, 28, 2123-2133(1992).

[14] Saraceno C J, Hoffmann M, Schriber C et al. SESAMs for high-power femtosecond modelocking: influence of growth temperature on damage and nonsaturable losses[C], AM4A.13(2012).

[15] Li C X, Gusev V, Dimakis E et al. Broadband photo-excited coherent acoustic frequency combs and mini-Brillouin-zone modes in a MQW-SESAM structure[J]. Applied Sciences, 9, 289(2019).

[16] Zhang L. Design and characteristics of semiconductor saturable absorption mirror[D](2010).

[17] Monzón J J, Yonte T, Sánchez-Soto L L. Basic factorization for multilayers[J]. Optics Letters, 26, 370-372(2001).

[18] Chai L, Wang Q Y, Zhao J S et al. Experimental study on the mechanism of a self-starting Kerr-lens-mode-locking using a semiconductor saturable absorber mirror[J]. Acta Physica Sinica, 50, 1298-1301(2001).

[19] Xu X Q. Research on ultrafast process based on pump-detection technology[D](2018).

[20] Basak A K. Ultrafast carrier and lattice dynamics studies in GaAs with intense optical excitation[EB/OL]. http://d-scholarship.pitt.edu/8350/1/basak_etd_Jul2010.pdf