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Acta Optica Sinica, Volume. 43, Issue 22, 2214001(2023)

Characteristics of 1064 nm Semiconductor Saturable Absorber Mirror

Qiuyue Zhang1,2, Nan Lin1、*, Ting Huang1,2, Suping Liu1, Xiaoyu Ma1, Cong Xiong1, Li Zhong1, and Zhigang Zhang3
Author Affiliations
  • 1National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2College of Materials Science and Optoelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China
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    AbstractGet PDF(in Chinese)
    Figures&Tables (10)
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    References (20)
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    Figures & Tables(10)
    SESAM structure diagram

    Fig. 1. SESAM structure diagram

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    SESAM field distribution with different quantum well periods

    Fig. 2. SESAM field distribution with different quantum well periods

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    Reflection spectra of SESAM with different quantum well periods

    Fig. 3. Reflection spectra of SESAM with different quantum well periods

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    Reflection spectra of test and simulation SESAM with different quantum well periods. (a) 7 QW; (b) 15 QW; (c) 30 QW

    Fig. 4. Reflection spectra of test and simulation SESAM with different quantum well periods. (a) 7 QW; (b) 15 QW; (c) 30 QW

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    Nonlinear test device for SESAM

    Fig. 5. Nonlinear test device for SESAM

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    Mode locking laser for SESAM testing

    Fig. 6. Mode locking laser for SESAM testing

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    Test results of SESAM mode locking. (a) Output pulse width measured by autocorrelator; (b) oscilloscope trace with a mode-locked pulse train

    Fig. 7. Test results of SESAM mode locking. (a) Output pulse width measured by autocorrelator; (b) oscilloscope trace with a mode-locked pulse train

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    Diagram of pump-probe optical path

    Fig. 8. Diagram of pump-probe optical path

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    Ultrafast spectrum of SESAM

    Fig. 9. Ultrafast spectrum of SESAM

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    • Table 1. Nonlinear test results

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      Table 1. Nonlinear test results

      Parameter7 QW15 QW30 QW
      Fsat /（μJ·cm-2）303530
      Rns /%909193.30
      Rlin /%71.8767.2059.80
      ΔR /%18.1323.8033.5
      1-Rns /%1096.70
      Fd /（mJ·cm-2）>1.5>1.5>1.5
      A0 /%28.1332.840.20
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    Qiuyue Zhang, Nan Lin, Ting Huang, Suping Liu, Xiaoyu Ma, Cong Xiong, Li Zhong, Zhigang Zhang. Characteristics of 1064 nm Semiconductor Saturable Absorber Mirror[J]. Acta Optica Sinica, 2023, 43(22): 2214001

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    Paper Information

    Category: Lasers and Laser Optics

    Received: May. 15, 2023

    Accepted: Jun. 26, 2023

    Published Online: Nov. 20, 2023

    The Author Email: Lin Nan (linnan@semi.ac.cn)

    DOI:10.3788/AOS230981

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology