High-uniformity 2 × 64 silicon avalanche photodiode arrays with silicon multiple epitaxy technology

Tiancai Wang; Peng Cao; Hongling Peng; Chuanwang Xu; Haizhi Song; Wanhua Zheng

doi:10.3788/COL202321.032501

Chinese Optics Letters, Volume. 21, Issue 3, 032501(2023)

High-uniformity 2 × 64 silicon avalanche photodiode arrays with silicon multiple epitaxy technology

Tiancai Wang^1,2, Peng Cao^1,2, Hongling Peng^1,3、*, Chuanwang Xu^1,2, Haizhi Song⁴, and Wanhua Zheng^1,3,5,6、**

¹Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²College of Electronic and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

³State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

⁴Southwest Institute of Technology Physics, Chengdu 610041, China

⁵Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

⁶Weifang Academy of Advanced Opto-electronic Circuits, Weifang 261021, China

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Tiancai Wang, Peng Cao, Hongling Peng, Chuanwang Xu, Haizhi Song, Wanhua Zheng, "High-uniformity 2 × 64 silicon avalanche photodiode arrays with silicon multiple epitaxy technology," Chin. Opt. Lett. 21, 032501 (2023)

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Paper Information

Category: Optoelectronics

Received: Apr. 29, 2022

Accepted: Sep. 20, 2022

Published Online: Oct. 17, 2022

The Author Email: Hongling Peng (hlpeng@semi.ac.cn), Wanhua Zheng (whzheng@semi.ac.cn)

DOI:10.3788/COL202321.032501

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