Polysilicon fuses are one time programmable non-volatile memory elements which are allowed to calibrate the integrated circuits to assure the circuit’s performance stability at PVT corners. Based on the improvement of a traditional architecture of fuse trimming circuit, a kind of highly reliable silicided polysilicon fuse trimming circuit under normal blowing voltage was designed, which benefited from low power consume, easy to expand and strong versatility. This fuse trimming circuit was fabricated in a 0.25 μm CMOS process. The tested results showed that, under 3.3 V blowing voltage, the fuse trimming of 14 bit DAC’s high 31 thermometer current sources was successful.