Optoelectronic Technology, Volume. 42, Issue 2, 129(2022)

Study on Developing Process of Large‑size Mask

Huachao ZHANG, Xiang GE, and Qilong XIONG
Author Affiliations
  • Hefei Qingyi Photomask Limited Company,Hefei 230011,CHN
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    Figures & Tables(12)
    Development and imaging flow chart of positive photoresist
    Schematic of developing spray
    H-type nozzle
    Schematic of Slit development
    Diagram of Slit nozzle
    Distribution map of CD measurement points
    Comparison of CD data
    Comparison of defect density
    Defect pictures
    • Table 1. The CD data of Spray development

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      Table 1. The CD data of Spray development

      单位/μm#1#2#3
      目标值222
      平均值2.086 42.099 32.106 8
      最大值2.142 82.155 02.170 9
      最小值2.022 82.031 02.058 3
      极差0.119 90.124 00.112 6
      偏差0.086 40.099 30.106 8
    • Table 2. The CD data of Slit development

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      Table 2. The CD data of Slit development

      单位/μm#4#5#6
      目标值222
      平均值2.049 22.062 32.035 7
      最大值2.099 32.104 72.085 7
      最小值2.025 42.019 62.002 1
      极差0.073 90.085 10.836
      偏差0.049 20.062 30.035 7
    • Table 3. Comparison between advantages and disadvantages of two developing spraying methods

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      Table 3. Comparison between advantages and disadvantages of two developing spraying methods

      喷液方式连续喷雾狭缝液帘
      优点冲击力小
      工艺维护便利
      药液消耗量小工艺稳定性高
      药液覆盖迅速
      CD分布更加均匀
      缺点冲击力大药液消耗量较大
      影响因素较多
      工艺维护繁琐
      工艺宽容性低
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    Huachao ZHANG, Xiang GE, Qilong XIONG. Study on Developing Process of Large‑size Mask[J]. Optoelectronic Technology, 2022, 42(2): 129

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    Paper Information

    Category: Research and Trial-manufacture

    Received: Dec. 28, 2021

    Accepted: --

    Published Online: Jul. 29, 2022

    The Author Email:

    DOI:10.19453/j.cnki.1005-488x.2022.02.009

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