Fig. 1. Experimental equipments. (a) Sputtering equipment; (b) annealing equipment

Fig. 2. Schematic of substituted substrate

Fig. 3. Schematic of geometric relationship between substrate and shadow mask

Fig. 4. XRR measurement results of multilayer films at different positions on substituted substrate after film thickness correction using shadow mask

Fig. 5. AFM images of samples at different positions on curved substrate with 300 mm diameter. (a) X = 32.5 mm (sample 1); (b) X = 72.5 mm (sample 5); (c) X = 112.5 mm (sample 9); (d) X = 142.5 mm (sample 12)

Fig. 6. Normalized results for periodic thicknesses of samples at different positions on curved substrate with 300 mm diameter

Fig. 7. XRR measurement results of multilayer film samples. (a) Mo/Si samples before and after annealing; (b) Mo/Si/C samples before and after annealing; (c) Mo/C/Si/C samples before and after annealing; (d) period thicknesses of Mo/Si, Mo/Si/C, and Mo/C/Si/C samples before and after annealing

Fig. 8. Measurement results of EUV reflectivity. (a) Mo/Si samples before and after annealing; (b) Mo/Si/C samples before and after annealing; (c) Mo/C/Si/C samples before and after annealing

Fig. 9. TEM measurement results at different resolutions. (a) Mo/Si sample (low resolution); (b) Mo/C/Si/C sample (low resolution); (c) Mo/Si sample (high resolution); (d) Mo/C/Si/C sample (high resolution)