AEROSPACE SHANGHAI, Volume. 42, Issue 4, 112(2025)
Optimization of Screening Methods for Microelectronic Devices Considering Manufacturing Defects
Figures & Tables(16)
Fig. 5. Input high-level current curves of the 21st pins of the 129th failed device and 4 normal devices before and after burn-in
Fig. 6. Static current curves of the test 176th device and 4 normal devices before and after burn-in
Fig. 7. Input high-level current curves of 88 devices before and after burn-in
Fig. 8. Distribution curves of the input high-level current variations of 88 devices before and after burn-in
Fig. 9. Curves of the static current variations before and after burn-in
Fig. 10. Distribution curves of the static current variations before and after burn-in
Table 1.
Procedures of the FEOL View tableView in ArticleTable 1.
Procedures of the FEOL 工序 过程控制项 进料与设备 进料淹没和制造工艺材料 用于晶圆制造的设备 氧化 氧化参数 光刻 涂胶 光刻和线宽大小 离子注入 离子注入参数 退火激活 扩散、注入的退火工艺温度和时间 掺杂 掺杂源浓度 外延生长 扩散剖面和外延层的杂质分布 表面钝化 钝化或玻璃钝化 钝化层固化 钝化工艺温度和时间 接触与互联 金属化淀积 金属化后处理 烧结或退火温度 背面处理 晶圆背面处理 晶圆探针 晶圆探针测试数据
Table 2.
Burn-in related BEOLs View tableView in ArticleTable 2.
Burn-in related BEOLs 工艺步骤 工艺缺陷 缺陷等级 划片 裂纹指向有源电路 T 异物 T 粘片 附着强度 P 粘接空洞 S 芯片共晶湿润性 T 金属化划痕 S 划片和芯片缺陷-间隙 S 划片与芯片缺陷-电路 T 焊料堆积 T 引线键合 附着强度-键合拉力值 P 焊点位置 T 焊点尾部 T 焊点间距 S 内部导线-分离 P 内部导线-撕裂 S 引线表面处理 引脚间漏电 P 封装 内部气体 S
Table 3.
<bold>Defect rate requirements of the P</bold>，<bold>S</bold>，<bold>T defect grades</bold> View tableView in ArticleTable 3.
<bold>Defect rate requirements of the P</bold>，<bold>S</bold>，<bold>T defect grades</bold> 缺陷危害等级 允许缺陷率/% 置信度/% P 0.5 99 S 3 95 T 4 90
Table 4.
Defects of the detected burn-in related processes View tableView in ArticleTable 4.
Defects of the detected burn-in related processes 工艺步骤 工艺缺陷 划片 指向金属化层及功能电路元件的裂纹 外来物质 粘片 铝层划伤 裂纹长度超过76 μm或裂纹与任何工作金属化层、功能电路元件之间距离小于6.5 μm；工作铝层或键合区边缘与裸露半导体材料之间距离小于6.5 μm；终止于芯片边缘的半圆形裂纹，其弦长超过未被钝化层覆盖的最小间距 有源电路区中出现缺损或裂纹 导电胶多余物 引线键合 键合拉力 管芯上的键75%以下部分在未被玻璃钝化的键合区内 键合尾部延伸到有玻璃钝化层上，而该玻璃钝化层呈现出明显的扩展到尾部下面的裂纹或断裂 键和有玻璃钝化层或无玻璃钝化层的非公共金属化层、划片线、另一条键合线或键之间水平距离小于6.5 μm 键被搁伤或蹭伤
Table 5.
Failure statistics summary for three 3 batches of devices View tableView in ArticleTable 5.
Failure statistics summary for three 3 batches of devices 生产批号 筛选器件数 失效数 失效率/% 2211635 451 14 3.10 2307470 567 22 3.88 2312708 461 22 4.77
Table 6.
Electrical test parameters and thier failure criteria View tableView in ArticleTable 6.
Electrical test parameters and thier failure criteria 电测试参数 极限值 老炼 静态电流 输入低电平电流 输入高电平电流 输出低电平电压 输出高电平电压
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Zhiwei ZHENG, Ranran ZHAO, Cen CHEN, Hao CHEN, Guofu ZHAI. Optimization of Screening Methods for Microelectronic Devices Considering Manufacturing Defects[J]. AEROSPACE SHANGHAI, 2025, 42(4): 112
Paper Information
Category: Components and Devices Failure Physics
Received: May. 31, 2025
Accepted: --
Published Online: Sep. 29, 2025
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