Chinese Journal of Lasers, Volume. 48, Issue 2, 0202011(2021)

Research Progress on Laser Processing of Antireflection Surfaces

Zhizhen Jiao, Jichao Li, Zhaodi Chen, Dongdong Han, and Yonglai Zhang*
Author Affiliations
  • State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, Jilin 130012, China
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    Figures & Tables(10)
    Light acting on structures with different sizes[50]. (a) Light irradiating macro-structural unit; (b) light interacting with microstructure to form “light trapping”; (c) light interacting with nanostructure; (d) light gradually bending through surface with refractive index gradient
    Morphology and reflection spectra of laser-induced nanonails [68]. (a) Cross-sectional SEM image of laser induced nano-nail; (b) picture of fused silica sample; reflectance spectra of (c) untreated and (d) laser-processed samples
    SEM images and spectra of different structures[55]. SEM images of Stru.1 under laser scanning intervals of (a) 30μm, (c) 40μm and (e) 50μm; SEM images of Stru. 2 under laser scanning intervals of (b) 30μm, (d) 40μm, and (f) 50μm; (g) spectra of two structures under different laser scanning intervals
    Flow chart for preparing anti-moth-eye nanoarray structure on Si template using laser interference and PDMS transfer technology[76]
    Performance tests of AR IMN PDMS (P380)/glass encapsulated organic solar cells[76]. (a) Current density versus voltage; (b) external quantum efficiency spectra of bare glass substrate and AR IMN PDMS (P380) / glass encapsulated organic solar cells; (c) power conversion efficiency of AR IMN PDMS (P380) / glass encapsulated organic solar cells versus operation time
    Morphology and performance of double-periodic corrugated structure[96]. (a) Schematic of double-periodic corrugated structure used for broadband light extraction; (b)--(d) surface AFM images of 1D single- and double-periodic corrugated structure ; (e) current density versus brightness (current density versus voltage characteristics shown in inset); (f) current density versus efficiency (double-periodic and planar OLEDs operating at same driving v
    Performance comparison of nitrogen-doped single/double absorption layer photodetectors[97]. (a)(b) Schematic of two different nitrogen-doped photodetectors; (c)(d) relationship between photocurrent and dark current ; (e)(f) relationship between responsivity and voltage
    Schematic diagram of solar-driven interface evaporation and performance comparison[106]. (a) Schematic of solar-driven water evaporation device; (b) light-to-heat conversion efficiency and average absorption rate of each sample under one sunlight
    • Table 1. Comparison of methods for fabrication of AR surfaces

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      Table 1. Comparison of methods for fabrication of AR surfaces

      MethodAR StructureAdvantageDisadvantageReference
      Sol-gelDouble-shelledhollow nanosphereSimple method and uniformproduct compositionHigh cost and consuming time[10]
      PhotolithographyNanoneedleFacile method, and controllablemorphology and size of graphicsCostly and complicated master[11]
      Nano imprintingMoth's eyenanostructureHigh resolution, fast preparationprocess, and low costCostly and complicated master andhigh environmental standards[12]
      Wet etching3D compoundeye structureSimple method, fast preparationprocess, large production area,and good etching selectivityPoor anisotropy andtough conditions[13]
      Dry etchingAsymmetricnanowirestructureFast preparation process, highflexibility and anisotropic etchingExpensive equipment[14]
      Chemical vaporgrowthNanoconeSimple device, controllablecoating thickness and densityLimited reaction conditions[51]
      Laser processingGrating structureFast preparation process, highefficiency, mass production,green, high precision, andstrong controllabilitySpecial equipments[29]
      Hybrid structure
      [55]
    • Table 2. Reflectivity, transmissivity, absorptivity and wavelength of each AR material prepared by laser processing

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      Table 2. Reflectivity, transmissivity, absorptivity and wavelength of each AR material prepared by laser processing

      MaterialReflectivity /%Transmissivity /%Absorptivity /%WavelengthReference
      SiAbout 3.5----250--2500nm[29]
      2.06----300--2500nm[67]
      SiO2<4----450--1200nm[68]
      Ti alloy<6----500--1000nm[70]
      Ag-SiO2-Ag----70400--700nm[71]
      Cu<5----250--2250nm[55]
      <3----14 --18μm[72]
      PDMS-->94.2--350--800nm[76]
      ----90240--1050nm[77]
      ZnS-->92--8 --10μm[86]
      Sapphire-->85--3 --5μm[87]
      Graphene----98250--2500nm[88]
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    Zhizhen Jiao, Jichao Li, Zhaodi Chen, Dongdong Han, Yonglai Zhang. Research Progress on Laser Processing of Antireflection Surfaces[J]. Chinese Journal of Lasers, 2021, 48(2): 0202011

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    Paper Information

    Category: laser manufacturing

    Received: Jul. 30, 2020

    Accepted: Sep. 27, 2020

    Published Online: Jan. 6, 2021

    The Author Email: Zhang Yonglai (yonglaizhang@jlu.edu.cn)

    DOI:10.3788/CJL202148.0202011

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