Due to the failure of visual inspection to detect the phenomenon of broken edge during the equal-diameter growth process of single crystal silicon, a method based on the ISOMAP-DE-SVM was proposed to give early-warning before the phenomenon of broken edge. Firstly, the parameters with small variance were excluded, redundant parameters were rejected by the spearman correlation coefficient, the nonlinear correlation of remaining parameters was tested by maximal information cofficient. Then, the mean and standard deviation of the key parameters were input into isometric mapping and multiple dimensional scaling, and two samples were obtained. Finally, two samples were input into the support vector machine prediction model optimized by difference algorithm and genetic algorithm respectively, and four results were obtained. The prediction results show that the prediction model based on ISOMAP-DE-SVM can effectively predict the phenomenon of broken edge of single crystal silicon, the prediction model has the characteristics of fast convergence speed and high accuracy, and the average prediction rate can reach 96%. Meanwhile, the method reveals that the data in the equal-diameter growth process of single crystal silicon has nonlinear characteristics. In the practical application verification, it is shown that the model has certain engineering practical value.