Acta Optica Sinica, Volume. 43, Issue 14, 1425002(2023)

Study on Temperature Characteristics of DBR Based on Resonant Cavity Light Emitting Diode

Kaibing Ren, Jianjun Li*, Yuzheng Cui, Zhendong Zhang, Congle Fu, and Jun Deng
Author Affiliations
  • Key Laboratory of Opto-Electronic Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China
  • show less
    References(13)

    [1] Schubert E F, Wang Y H, Cho A Y et al. Resonant cavity light-emitting diode[J]. Applied Physics Letters, 60, 921-923(1992).

    [2] Moudakir T, Genty F, Kunzer M et al. Design, fabrication, and characterization of near-milliwatt-power RCLEDs emitting at 390 nm[J]. IEEE Photonics Journal, 5, 8400709(2013).

    [3] Ji Y, Xu Y Q, Chen B L et al. Development status and research progress of silicon-based microdisplay[J]. Laser & Optoelectronics Progress, 59, 2011007(2022).

    [4] Ma R Q. Effect of peak wavelengths of RGB-LED light source on its color rendering property[J]. Laser & Optoelectronics Progress, 58, 2333002(2021).

    [5] Yang Q W, Li J J. Research and development of red resonant cavity light-emitting diode[J]. China Illuminating Engineering Journal, 32, 36-43(2021).

    [6] Yao B, Chen Q F, Chen Y J et al. 280 mHz linewidth DBR fiber laser based on PDH frequency stabilization with ultrastable cavity[J]. Chinese Journal of Lasers, 48, 0501014(2021).

    [7] Ma J. Structural design and material epitaxy of multi-active region resonant cavity light-emitting diode[D](2010).

    [8] Zhang L S. Structural design and development of high power vertical cavity surface emitting laser[D], 37-39(2012).

    [9] Zhang J W, Ning Y Q, Zhang X et al. Development and future of vertical cavity surface emitting lasers operated at high temperatures(invited)[J]. Acta Photonica Sinica, 51, 0251201(2022).

    [10] Gehrsitz S, Reinhart F K, Gourgon C et al. The refractive index of AlxGa1-xAs below the band gap: accurate determination and empirical modeling[J]. Journal of Applied Physics, 87, 7825-7837(2000).

    [11] Blakemore J S. Semiconducting and other major properties of gallium arsenide[J]. Journal of Applied Physics, 53, R123-R181(1982).

    [12] Choquette K D, Geib K M, Ashby C I H et al. Advances in selective wet oxidation of AlGaAs alloys[J]. IEEE Journal of Selected Topics in Quantum Electronics, 3, 916-926(1997).

    [13] Babic D I, Corzine S W. Analytic expressions for the reflection delay, penetration depth, and absorptance of quarter-wave dielectric mirrors[J]. IEEE Journal of Quantum Electronics, 28, 514-524(1992).

    Tools

    Get Citation

    Copy Citation Text

    Kaibing Ren, Jianjun Li, Yuzheng Cui, Zhendong Zhang, Congle Fu, Jun Deng. Study on Temperature Characteristics of DBR Based on Resonant Cavity Light Emitting Diode[J]. Acta Optica Sinica, 2023, 43(14): 1425002

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: OPTOELECTRONICS

    Received: Mar. 2, 2023

    Accepted: Apr. 3, 2023

    Published Online: Jul. 13, 2023

    The Author Email: Jianjun Li (lijianjun@bjut.edu.cn)

    DOI:10.3788/AOS230623

    Topics