Acta Optica Sinica, Volume. 43, Issue 14, 1425002(2023)

Study on Temperature Characteristics of DBR Based on Resonant Cavity Light Emitting Diode

Kaibing Ren, Jianjun Li*, Yuzheng Cui, Zhendong Zhang, Congle Fu, and Jun Deng
Author Affiliations
  • Key Laboratory of Opto-Electronic Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China
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    Figures & Tables(9)
    Relationship between the gap width of AlxGa1-xAs and the components of Al
    Dependence of the refractive index of Al0.5Ga0.5As and Al0.95Ga0.05As on the incident wavelength and temperature
    Relationship of DBR reflectivity with the pairs of DBR for different material combinations
    Reflectance spectra of the DBR at different temperatures
    Central reflection wavelength of the DBR at different temperatures
    White light reflection spectra of DBR at different temperatures
    Relationship between central wavelength of DBR and temperature variation
    • Table 1. Parameters used for calculating refractive index n

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      Table 1. Parameters used for calculating refractive index n

      cx,TA1/C0 /μm2C1 /μm2E0 /μmE12 /μm2
      c0A0T50.535021.5647EΓGaAs(T)E102T
      c1-16.1590-150.7000113.74001.130811.0060
      c243.5110-62.2090-112.50000.1436-3.0800
      c3-71.3170797.1600108.401000
      c457.5350-1125.0000-47.318000
      c5-17.4510503.7900000
    • Table 2. Parameters used for calculating A0T and E102T

      View table

      Table 2. Parameters used for calculating A0T and E102T

      A0Ta0a1 /Ka2 /K2
      5.96137.1780×10-4-0.9530×10-6
      E102(T)e0e1 /Ke2 /K2
      4.7171-3.2370×10-4-1.3580×10-6
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    Kaibing Ren, Jianjun Li, Yuzheng Cui, Zhendong Zhang, Congle Fu, Jun Deng. Study on Temperature Characteristics of DBR Based on Resonant Cavity Light Emitting Diode[J]. Acta Optica Sinica, 2023, 43(14): 1425002

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    Paper Information

    Category: OPTOELECTRONICS

    Received: Mar. 2, 2023

    Accepted: Apr. 3, 2023

    Published Online: Jul. 13, 2023

    The Author Email: Jianjun Li (lijianjun@bjut.edu.cn)

    DOI:10.3788/AOS230623

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