Semiconductor Optoelectronics, Volume. 46, Issue 3, 493(2025)

Growth of freestanding AlSb nanowires on Si substrates via molecular beam epitaxy and their characterization

WEN Lianjun1,2 and PAN Dong2
Author Affiliations
  • 1Chongqing Optoelectronics Research Institute, Chongqing 400060, CHN
  • 2State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, CHN
  • show less
    Figures & Tables(0)
    Tools

    Get Citation

    Copy Citation Text

    WEN Lianjun, PAN Dong. Growth of freestanding AlSb nanowires on Si substrates via molecular beam epitaxy and their characterization[J]. Semiconductor Optoelectronics, 2025, 46(3): 493

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Jan. 26, 2025

    Accepted: Sep. 18, 2025

    Published Online: Sep. 18, 2025

    The Author Email:

    DOI:10.16818/j.issn1001-5868.20250126001

    Topics