Semiconductor Optoelectronics, Volume. 46, Issue 3, 493(2025)
Growth of freestanding AlSb nanowires on Si substrates via molecular beam epitaxy and their characterization
Get Citation
Copy Citation Text
WEN Lianjun, PAN Dong. Growth of freestanding AlSb nanowires on Si substrates via molecular beam epitaxy and their characterization[J]. Semiconductor Optoelectronics, 2025, 46(3): 493
Category:
Received: Jan. 26, 2025
Accepted: Sep. 18, 2025
Published Online: Sep. 18, 2025
The Author Email: