Semiconductor Optoelectronics, Volume. 46, Issue 3, 493(2025)

Growth of freestanding AlSb nanowires on Si substrates via molecular beam epitaxy and their characterization

WEN Lianjun1,2 and PAN Dong2
Author Affiliations
  • 1Chongqing Optoelectronics Research Institute, Chongqing 400060, CHN
  • 2State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, CHN
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    Aluminum antimonide (AlSb) shows broad application prospects in the fields ofhigh-energy particle detectors and solar cells because of its outstanding optoelectronic properties. Here, we report the growth of freestanding AlSb nanowires on Si substrates via molecular beam epitaxy. The epitaxial growth of AlSb nanowires does not require foreign metal catalysts, and the obtained freestanding nanowires have small diameters. In addition, the growth temperature and Ⅴ/Ⅲflux ratios have an obvious effect on the morphology of the nanowires, and the axial growth rate of the nanowires can be improved by increasing the growth temperature. Results of detailed structural investigations confirm that the AlSb nanowires exhibit a zinc-blende phase and are easily susceptible to deliquescence in air. This paper presents a new method for synthesizing AlSb semiconductors on Si substrates.

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    WEN Lianjun, PAN Dong. Growth of freestanding AlSb nanowires on Si substrates via molecular beam epitaxy and their characterization[J]. Semiconductor Optoelectronics, 2025, 46(3): 493

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    Paper Information

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    Received: Jan. 26, 2025

    Accepted: Sep. 18, 2025

    Published Online: Sep. 18, 2025

    The Author Email:

    DOI:10.16818/j.issn1001-5868.20250126001

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