Research Progress of Ultra-Wide Bandgap &#946;-Ga<sub>2</sub>O<sub>3</sub> Power Devices on Novel Structures and Electro-Thermal Characteristics

WEI Yuxi; MA Xinyu; JIANG Zejun; WEI Jie; LUO Xiaorong

doi:10.16553/j.cnki.issn1000-985x.2024.0265

Journal of Synthetic Crystals, Volume. 54, Issue 2, 263(2025)

Research Progress of Ultra-Wide Bandgap β-Ga₂O₃ Power Devices on Novel Structures and Electro-Thermal Characteristics

WEI Yuxi¹, MA Xinyu¹, JIANG Zejun¹, WEI Jie¹, and LUO Xiaorong^1,2、*

¹State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

²College of Microelectronics, Chengdu University of Information Technology, Chengdu 610225, China

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WEI Yuxi, MA Xinyu, JIANG Zejun, WEI Jie, LUO Xiaorong. Research Progress of Ultra-Wide Bandgap β-Ga₂O₃ Power Devices on Novel Structures and Electro-Thermal Characteristics[J]. Journal of Synthetic Crystals, 2025, 54(2): 263

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Paper Information

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Received: Oct. 31, 2024

Accepted: Mar. 31, 2025

Published Online: Mar. 31, 2025

The Author Email: LUO Xiaorong (xrluo@uestc.edu.cn)

DOI:10.16553/j.cnki.issn1000-985x.2024.0265

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology