Influence of In<sub>y</sub>Al<sub>1-y</sub>As graded buffer layer on properties of InP-HEMT materials

Fang-Kun TIAN; Li-Kun AI; Guo-Yu SUN; An-Huai XU; Hua HUANG; Qian GONG; Ming QI

doi:10.11972/j.issn.1001-9014.2022.04.011

Journal of Infrared and Millimeter Waves, Volume. 41, Issue 4, 726(2022)

Influence of In_yAl_1-yAs graded buffer layer on properties of InP-HEMT materials

Fang-Kun TIAN^1,2, Li-Kun AI^1、*, Guo-Yu SUN³, An-Huai XU¹, Hua HUANG¹, Qian GONG¹, and Ming QI¹

¹Key Laboratory of Terahertz Solid State Technology，Shanghai Institute of Microsystem and Information Technology，Chinese Academy of Sciences，Shanghai 200050，China

²Center of Materials Science and Optoelectronics Engineering，University of Chinese Academy of Sciences，Beijing 100049，China

³College of Physics and Electronic Engineering，Hainan Normal University，Haikou 571158，China

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References(40)

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Fang-Kun TIAN, Li-Kun AI, Guo-Yu SUN, An-Huai XU, Hua HUANG, Qian GONG, Ming QI. Influence of In_yAl_1-yAs graded buffer layer on properties of InP-HEMT materials[J]. Journal of Infrared and Millimeter Waves, 2022, 41(4): 726

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Paper Information

Category: Research Articles

Received: Nov. 18, 2021

Accepted: --

Published Online: Dec. 13, 2022

The Author Email: Li-Kun AI (likunai@mail.sim.ac.cn)

DOI:10.11972/j.issn.1001-9014.2022.04.011

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology